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Fabrizio Arciprete nasce a Roma il 11 Dicembre 1966.

Nel 1991 si laurea in Fisica con lode all'Università di Roma "Tor Vergata".

Consegue il Dottorato di Ricerca in Fisica nel Novembre 1995 con la tesi: "Study of the formation of metal/GaAs(110) interfaces by means of electron energy loss and photoemission spectroscopies".

Da Gennaio 2016 è Professore Associato presso il Dipartimento di Fisica dell'Università di Roma "Tor Vergata".

Da Novembre 1999 a Dicembre 2015 è Ricercatore presso il Dipartimento di Fisica dell'Università di Roma "Tor Vergata".

Novembre 2017 - Consegue l'Abilitazione Scientifica Nazionale per la qualifica di Professore Ordinario per il settore concorsuale 02/B1 (Fisica sperimentale della Materia).

Da Ottobre a Dicembre 2015 è Guest Scientist c/o Paul-Drude-Institut in Berlin nel gruppo di Epiassia per: “Molecular Beam Epitaxy growth and characterization of Phase Change Materials based on Ge(Sb)Te alloys and GeTe/Sb2Te3 superlattices”.

Da Ottobre a Dicembre 2014 è Guest Scientist c/o Paul-Drude-Institut in Berlin nel gruppo di Epiassia per: “Molecular Beam Epitaxy growth of the 2D crystal Sb2Te3 on several substrates”.

Tra il 1995 è 1999 ottiene varie fellowships Post-Doc dell'Istituto Nazionale per la Fisica della Materia (INFM) e del Consiglio Nazionale delle Ricerche (CNR).

 

Didattica

Dal 2016 F. Arciprete è titolare del corso: "Fisica Generale II (9 cfu)" per la Laurea Triennale in Chimica.

Dal 2011, è titolare del corso: "Introduzione alla Crescita dei Cristalli (6 cfu)" per la Laurea Magistrale in Scienza e Tecnologia dei Materiali e in Fisica.

Tra 2009 e il 2011, per il Dottorato di Ricerca in Fisica, dà una serie di lezioni su: "Epitaxial Growth of Semiconductor Nanostructures" e "Concepts in Crystal Growth: Molecular Beam Epitaxy".

E' relatore e correlatore per la tesi di Laurea di molti studenti dei corsi di laurea Triennale e Magistrale in Fisica e in Scienza dei Materiali e per studenti di Dottorato.

Tra il 2014 e il 2017 è membro del Collegio dei Docenti del Dottorato di Ricerca in Fisica dell'Università di Roma "Tor Vergata".

 

Ricerca

F. Arciprete è un esperto di Molecular Beam Epitaxy (MBE), Scanning Tunneling Microscopy e Atomic Force Microscopy; tecniche di diffrazione: RHEED (Reflection High Energy Electron Diffraction) e LEED (Low Energy Electron Diffraction), spettroscopia di fotoemissione (XPS e UPS), Reflectance Anisotropy Spectroscopy (RAS), Extended X-ray Absorption Fine Structure Spectroscopy (EXAFS).

- L'attività di ricerca principale riguarda la crescita mediante Molecular Beam Epitaxy e la caratterizzazione strutturale ed elettronica della lega GaAsBi, un materiale emergente per la Fotonica e potenzialmente un nuovo Isolante Topologico. Questa attività è in collaborazione con lo Institute of Physics della Academy of Sciences della Repubblica Ceca e con il Paul-Drude Institut di Berlino (D).

- In collaborazione con il Paul-Drude-Institute di Berlino si occupa della crescita e caratterizzazione di cristalli 2D e materiali a cambiamento di fase (PCM) basati sulla lega pseudobinaria GeTe-Sb2Te3.

L'attività di ricerca di F.Arciprete ha riguardato diverse tematiche:

1) Proprietà elettroniche di stato normale di superconduttori ad alta Tc.

2) Proprietà ottiche ed elettroniche di superficie di semiconduttori.

3) Crescita MBE e caratterizzazione di Semiconduttori Magnetici diluiti basati sulla lega GaMnAs (in collaborazione con il Nanosclae Science Department del Max-Planck-Institute di Stoccarda).

4) Crecita e caratterizzazione dell'eterostruttura di semiconduttori ad alto disadattamento reticolare InAs/GaAs(001). Lo scopo di questa ricerca è la comprensione dei fenomeni di nucleazione e dei meccanismi di crescita di Quantum Dots (QDs) di III-V. E' stato affrontato anche il problema della selezione selettiva di singoli QDs di InAs/GaAs.

Selezione di progetti di ricerca finanziati:

Consolidate the Foundations 2015: “GaAs(1-x)Bix aLLoY: a potential candidate for Future Photonic Devices – BILLY” – 18 mesi, 16500 €. University of Rome Tor Vergata, CUP: E82F16000400005. Principal Investigator.

Bilateral Mobility Project 2016-2018: “Study of Bi-containing III-V alloys as potential candidates for a new 3-dimensional topological insulator” – 15000 €. CNR-CAS(Czech Republic), cod. SAC.AD002.018.017

PRIN 2007: "Single InAs Quantum Dots self-assembled on GaAs(001) nanostructured surfaces:effects of the epitaxial growth on the structural and electronic properties" - 24 mesi, 146100 €. MIUR: cod.  2007S4FAA4_003.

PRIN 2005: “Selective Nucleation of InAs Quantum Dots on GaAs(001)” - 24 mesi.  MIUR: cod. 2005025173_001

 

 

F. Arciprete ha collaborazioni con varie istituzioni nazionali e internazionali:

- Paul Drude Institute for Solid State Electronics (Paul-Drude-Institut fur Festkorperelektronik) di Berlin per la crescita e caratterizzazione di materiali a cambiamento di fase (PCM) a cristalli 2D.

- Dipartimento di Fisica, Università di Modena e Reggio Emilia, per la modellizzazione teorica della crescita delle eterostrutture e delle proprietà otiche.

- Dipartimento di Fisica, Università di Firenze, per la caratterizzazione ottica delle nanostrutture.

- Institute of Physics, Academy of Sciences della Repubblica Ceca (Praga) per la caratterizzazione elettronica delle leghe di GaAsBi.

- Laboratorio STM dell'Istituto di Fisica della MAtria del CNR in Roma, per la caratterizzazione strutturale su scala atomica delle superfici.

- Laboratorio L-NESS di Como dell'Istituto di Fotonica e Nanotecnologie del CNR, per la nanostrutturazione delle superfici mediante litografia.

 

F.Arciprete è revisore di Progetti per il Ministero per l'Università e la Ricerca (MIUR), Aree ERC: PE3_7, PE4_4, PE5_8.

E' revisore per riviste internazionali della: Elsevier Science, American Institute of Physics, MDPI AG, Nature Publishing Group, American Chemical Society.

F. Arciprete ha partecipato a numerose Conferenze Internazionali e Workshop con molte presentazioni orali e relazioni su invito.

E' autore di più di 80 pubblicazioni su riviste ad alto fattore di impatto (IF).

 

Lista delle 5 migliori pubblicazioni:

1. Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials

V. Bragaglia, F. Arciprete, W. Zhang, A. M. Mio, E. Zallo, K. Perumal, A. Giussani, S. Cecchi, J. E. Boschker, H. Riechert, S. Privitera, E. Rimini, R. Mazzarello, R. Calarco; Scientific Reports 6, 23843 (2016)

2. The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs

F. Arciprete, E. Placidi, R.Magri, M. Fanfoni, A. Balzarotti, and F.Patella; ACS Nano 7, 3868-3875 (2013)

3. Tracing the two-to-three dimensional transition in the InAs/GaAs(001) heteroepitaxial growth

F. Patella, S. Nufris, F. Arciprete, M. Fanfoni, E. Placidi, A. Sgarlata, and A. Balzarotti; Physical Review B 67, 205308 (2003).

4. Temperature dependence of the size distribution function of InAs on GaAs(001) quantum dots

F. Arciprete, E. Placidi, M. Fanfoni, F. Patella, A. Della Pia, and A. Balzarotti; Physical Review B 81, 165306 (2010).

5. Apparent critical thickness versus temperature for InAs quantum dot formation of InAs on GaAs(001)

F. Patella, F. Arciprete, M. Fanfoni, A. Balzarotti, E. Placidi; Applied Physics Letters 88, 161903 (2006).

Fabrizio Arciprete was born in Rome December 11, 1966.

In 1991 he graduated cum laude in Physics at the University of Rome Tor Vergata.

He obtained his PhD in Physics in November 1995 with the thesis: "Study of the formation of metal/GaAs(110) interfaces by means of electron energy loss and photoemission spectroscopies".

Since January 2016 he is Associate Professor (permanent staff) at the Department of Physics, University of Rome Tor Vergata.

From November 1999 to December 2015 he is Researcher (permanent staff) at the Department of Physics, University of Rome Tor Vergata.

November 2017 - He obtains the National Scientific Qualification to function as full professor in Italian Universities for the area of Experimental Condensed Matter Physics (02/B1).

From October to December 2015 he is Guest Scientist c/o Paul-Drude-Institut in Berlin in the Epitaxy group for: “Molecular Beam Epitaxy growth and characterization of Phase Change Materials based on Ge(Sb)Te alloys and GeTe/Sb2Te3 superlattices”.

From October to December 2014 he is Guest Scientist c/o Paul-Drude-Institut in Berlin in the Epitaxy group for: “Molecular Beam Epitaxy growth of the 2D crystal Sb2Te3 on several substrates”.

Between 1995 and 1999 he got several fellowships Post-Doc of the National Research Council (CNR) and the National Institute for the Physics of the Matter (INFM).

 

Teaching

Since 2016 F. Arciprete is lecturer of the course: "General Physics II" for the Bachelor program in Chemistry.

Since 2011, he is lecturer of the course: "Introduction to Crystal Growth" for the Master programs in Physics and Material Science and Technology.

Between 2009 and 2011, he gave a series of lectures for the PhD School in Physics: "Epitaxial Growth of Semiconductor Nanostructures", "Concepts in Crystal Growth: Molecular Beam Epitaxy".

He is supervisor and co-supervisor for many Bachelor and Master students in Physics and Materials Science and for PhD students in Physics.

Between 2014 and 2017, F. Arciprete was member of the Academic Board of the PhD School in Physics (University of Rome Tor Vergata).

 

Research

F. Arciprete is an expert of Molecular Beam Epitaxy (MBE), Scanning Tunneling Microscopy and Atomic Force Microscopy; diffraction techniques: RHEED (Reflection High Energy Electron Diffraction) and LEED (Low Energy Electron Diffraction), photoemission spectroscopy (XPS and UPS), Reflectance Anisotropy Spectroscopy (RAS), Extended X-ray Absorption Fine Structure Spectroscopy (EXAFS).

- The main research activity concerns the Molecular Beam Epitaxial growth and the structural and electronic characterization of the GaAsBi alloy as emerging material for Photonics and potential new Topological Insulator. This activity is in collaboration with the Institute of Physics, Academy of Sciences of the Czech Republic and the Paul-Drude Institut di Berlino (D)..

- In collaboration with the Paul-Drude-Institute in Berlin he is carrying out a research on the growth and characterization of 2D crystals and phase change materials based on the pseudobinary alloys GeTe-Sb2Te3.

The research activity of F.Arciprete has covered several topics:

1) Normal state electronic properties of high-Tc superconductors.

2) Optical and electronic properties of semiconductor surfaces.

3) MBE growth and characterization of Diluted Magnetic Semiconductors based on GaMnAs (Collaboration with the Nanoscale Science Department of Max-Planck-Institute in Stuttgart).

4) MBE Growth and characterization of the high lattice mismatched semiconductor heterostructure InAs/GaAs(001). The aim of this work was to understand the nucleation phenomena and growth mechanism for III-V quantum dots. It is also addressed the problem of the selective nucleation of InAs/GaAs QDs.

Selection of funded projects:

Consolidate the Foundations 2015: “GaAs(1-x)Bix aLLoY: a potential candidate for Future Photonic Devices – BILLY” – 18 months, 16500 €. University of Rome Tor Vergata, CUP: E82F16000400005. Principal Investigator.

Bilateral Mobility Project 2016-2018: “Study of Bi-containing III-V alloys as potential candidates for a new 3-dimensional topological insulator” – 15000 €. CNR-CAS(Czech Republic), cod. SAC.AD002.018.017

PRIN 2007: "Single InAs Quantum Dots self-assembled on GaAs(001) nanostructured surfaces:effects of the epitaxial growth on the structural and electronic properties" - 24 months, 146100 €. MIUR: cod.  2007S4FAA4_003.

PRIN 2005: “Selective Nucleation of InAs Quantum Dots on GaAs(001)” - 24 months.  MIUR: cod. 2005025173_001

 

F. Arciprete has collaborations with various national and international institutions:

- Paul Drude Institute for Solid State Electronics (Paul-Drude-Institut fur Festkorperelektronik) in Berlin for the growth and characterization of phase change materials (PCM) and 2D crystals.

- Department of Physics, University of Modena e Reggio Emilia, for the theoretical modelling of heterostructures growth and optical propierties.

- Department of Physics, University of Florence, for the optical characterization of nanostructures.

- Institute of Physics Academy of Sciences of the Czech Republic, Prague for the electronic characterization of GaAsBi alloys.

- STM laboratory of the Institute of the Structure of the Matter (ISM) of CNR in Rome, for STM structural characterization of surfaces on atomic scale.

- L-NESS laboratory in Como of the Institute of Photonic and Nanotechnology IFN of CNR, for the substrates nanostructuring by lithographic techniques.

 

He is referee for Research Projects of Italian Minister of University and Research (MIUR). European Research Council areas: PE3_7, PE4_4, PE5_8.

He is referee for international journals of the Elsevier Science, American Institute of Physics, MDPI AG, Nature Publishing Group, American Chemical Society.

F. Arciprete has attended at many International Conferences and Workshops with many oral presentation and invited talks.

He is author of more than 80 papers on high impact factor (IF) international journals.

 

List of my top 5 publications

1. Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials

V. Bragaglia, F. Arciprete, W. Zhang, A. M. Mio, E. Zallo, K. Perumal, A. Giussani, S. Cecchi, J. E. Boschker, H. Riechert, S. Privitera, E. Rimini, R. Mazzarello, R. Calarco; Scientific Reports 6, 23843 (2016)

2. The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs

F. Arciprete, E. Placidi, R.Magri, M. Fanfoni, A. Balzarotti, and F.Patella; ACS Nano 7, 3868-3875 (2013)

3. Tracing the two-to-three dimensional transition in the InAs/GaAs(001) heteroepitaxial growth

F. Patella, S. Nufris, F. Arciprete, M. Fanfoni, E. Placidi, A. Sgarlata, and A. Balzarotti; Physical Review B 67, 205308 (2003).

4. Temperature dependence of the size distribution function of InAs on GaAs(001) quantum dots

F. Arciprete, E. Placidi, M. Fanfoni, F. Patella, A. Della Pia, and A. Balzarotti; Physical Review B 81, 165306 (2010).

5. Apparent critical thickness versus temperature for InAs quantum dot formation of InAs on GaAs(001)

F. Patella, F. Arciprete, M. Fanfoni, A. Balzarotti, E. Placidi; Applied Physics Letters 88, 161903 (2006).

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SCIENTIFIC REPORTS, 7(1), 1466.";s:4:"data";s:10:"2017-05-03";s:2:"id";s:20:"PUBBLICAZIONE_321250";s:6:"handle";s:11:"2108/189758";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";s:1053:"The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage of passivated vicinal surfaces we are able to insert strain at step edges of layered chalcogenides, as demonstrated by the tilt of the epilayer in the growth direction with respect of the substrate orientation. The interplay between classical and van der Waals epitaxy can be modulated with an accurate choice of the substrate miscut. High quality crystalline GexSb2Te3+x with almost Ge1Sb2Te4 composition and improved degree of ordering of the vacancy layers is thus obtained by epitaxial growth of layers on 3-4° stepped Si substrates. These results highlight that it is possible to build and control strain in van der Waals systems, therefore opening up new prospects for the functionalization of epilayers by directly employing vicinal substrates.";s:9:"metadata5";s:105:"Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys";s:9:"metadata6";s:82:"Zallo, E; Cecchi, S; Boschker, JE; Mio, AM; Arciprete, F; Privitera, S; Calarco, R";s:9:"metadata7";s:26:"10.1038/s41598-017-01502-z";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:10;a:14:{s:9:"citazione";s:167:"Arciprete, F., & Calarco, R. (2017). A special section on effects of strain in semiconductor heterostructures. 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Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures. SCIENTIFIC REPORTS, 7(1), 2616.";s:4:"data";s:4:"2017";s:2:"id";s:20:"PUBBLICAZIONE_321255";s:6:"handle";s:11:"2108/189764";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";s:17:"Multidisciplinary";s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:97:"Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures";s:9:"metadata6";s:108:"Mio, AM; Privitera, SMS; Bragaglia, V; Arciprete, F; Cecchi, S; Litrico, G; Persch, C; Calarco, R; Rimini, E";s:9:"metadata7";s:26:"10.1038/s41598-017-02710-3";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:17;a:14:{s:9:"citazione";s:259:"Bragaglia, V., Holldack, K., Boschker, J.e., Arciprete, F., Zallo, E., Flissikowski, T., et al. (2016). Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2 Te3 Alloys. SCIENTIFIC REPORTS, 6, 28560.";s:4:"data";s:10:"2016-06-24";s:2:"id";s:20:"PUBBLICAZIONE_287169";s:6:"handle";s:11:"2108/159776";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";s:1041:"A combination of far-infrared and Raman spectroscopy is employed to investigate vibrational modes and the carrier behavior in amorphous and crystalline ordered GeTe-Sb2Te3 alloys (GST) epitaxially grown on Si(111). The infrared active GST mode is not observed in the Raman spectra and vice versa, indication of the fact that inversion symmetry is preserved in the metastable cubic phase in accordance with the Fm3 space group. For the trigonal phase, instead, a partial symmetry break due to Ge/Sb mixed anion layers is observed. By studying the crystallization process upon annealing with both the techniques, we identify temperature regions corresponding to the occurrence of different phases as well as the transition from one phase to the next. Activation energies of 0.43 eV and 0.08 eV for the electron conduction are obtained for both cubic and trigonal phases, respectively. In addition a metal-insulator transition is clearly identified to occur at the onset of the transition between the disordered and the ordered cubic phase.";s:9:"metadata5";s:124:"Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2 Te3 Alloys";s:9:"metadata6";s:92:"Bragaglia, V; Holldack, K; Boschker, Je; Arciprete, F; Zallo, E; Flissikowski, T; Calarco, R";s:9:"metadata7";s:17:"10.1038/srep28560";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:18;a:14:{s:9:"citazione";s:198:"Bragaglia, V., Arciprete, F., Zhang, W., Mio, A.M., Zallo, E, et al. (2016). 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