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CURRICULUM VITAE DI GIUSEPPE BALESTRINO

 

Nato a Mercato Sanseverino (SA), Italia, il 15 novembre 1952.

Cursus Studiorum

 

• 1975 Laurea in Fisica presso l'Università di Roma "La Sapienza" con il massimo dei voti e la lode.

• 1976 - 1978 Borsa di studio del Consiglio Nazionale delle Ricerche. presso l'Istituto di Elettronica dello Stato Solido a Roma.

• 1979 Visiting Research Associate presso l'Università del Colorado (USA), Dipartimento di Ingegneria Elettrica. Carriera accademica

• 1980 - 1987 Ricercatore del Consiglio Nazionale delle Ricerche, Istituto di Elettronica dello Stato Solido, Roma. • 1987 - 1990 Professore Associato di Fisica presso l'Università di Salerno.

• 1991 - 1999 Professore Associato di Fisica e Fisica dello Stato Solido presso l'Università "Tor Vergata", Roma. • Dal 2000 Professore Ordinario di Fisica della Materia presso l'Università "Tor Vergata", Roma.

• 2008/2009 Docente presso il Master  internazionale "Materiali per nanotecnologie e Nanoindustry" promosso dalla Società Russa di Nanotecnologie

Attività di ricerca

L'attività di ricerca di Giuseppe Balestrino si estende su quasi quattro decenni. Durante la sua carriera come ricercatore, l'attività di Balestrino si è concentrata principalmente sulla sintesi e lo studio di nuovi materiali con interessanti proprietà fisiche. Un approccio specifico è stato adottato che prevede di seguire l'intero processo dalla sintesi dei materiali (in forma di pellets policristallini, cristalli singoli, film sottili ed eterostrutture complesse) alla loro caratterizzazione strutturale e fisica. Tale approccio "olistico" ha permesso una solida comprensione del problema dello sviluppo di "materiali con proprietà predeterminate". La ricerca è stata spesso condotta in collaborazione con esperti riconosciuti in tutto il mondo nei diversi campi. Recentemente, un importante riconoscimento delle sue attività è venuto dalla Advanced Light Source (Lawrence Berkeley National Laboratories), che ha invitato i membri del gruppo di Balestrino a collaborare nella realizzazione di un sistema di deposizione PLD direttamente collegato con il sincrotrone. Tale apparecchiatura "in situ"  è ora operativa e sta iniziando la produzione di campioni per la caratterizzazione tramite sincrotrone. Allo stesso tempo, un giovane ricercatore, formato nel campo della deposizione di film sottili presso il gruppo di Balestrino a Roma, ha recentemente ottenuto una posizione permanente, presso l'Istituto Nazionale per la Scienza dei Materiali (NIMS) a Tsukuba, con il compito di istituire un laboratorio per la deposizione traite di film sottili di ossidi conduttori ionici.

           

Il numero di materiali investigati e di tecniche sperimentali utilizzate è stato molto ampio. Di seguito viene riportato un riassunto schematico dell’ attività scientifica di Balestrino e dei suoi maggiori successi.. 1976-1986 Caratterizzazione a raggi X di film magnetici e semiconduttori cresciuti tramite da epitassia da fase liquida e sputtering. Caratterizzazione Mössbauer di materiali magnetici. Spettroscopia Mössbauer tramite elettroni di conversione per lo studio delle proprietà superficiali di film magnetici. Tra i principali risultati, l'indagine delle transizioni di fase magnetiche nei granati ferromagnetici.

1986 - 1996 Crescita di materiali superconduttori ad alta temperatura in forma di pellets policristallini, cristalli singoli e film. Esame delle loro caratteristiche fisiche (strutturali, di trasporto e proprietà magnetiche). Studio delle fluttuazioni termodinamiche nei materiali superconduttori ad alta temperatura critica. Tra i principali risultati ottenuti, il primo articolo (in contemporanea con un altro gruppo nello stesso numero del Journal of Crystal Growth) sulla crescita di cristalli singoli di YBCO con il metodo del flusso, il primo rapporto sulla crescita di film sottili di BSCCO superconduttori tramite epitassia da fase liquida, e gli studi pionieristici sulla dimensionalità delle fluttuazioni termodinamiche nei cuprati ad alta Tc.

1996 - 2006 Sintesi di film di diamante. Sviluppo, per la prima volta in Italia, della tecnica di deposizione laser pulsata (PLD), con RHEED in situ per la crescita layer-by-layer di ossidi di composti complessi (Laser MBE). Applicazione della tecnica laser MBE alla crescita di diversi ossidi: cuprati, ruhenati, manganiti, niobati, ferriti, ..... Sintesi di superreticoli ed eterostrutture composte di strati aventi spessori pari a poche celle unitarie cristallografiche. Superconduttività indotta in eterostrutture di cuprati basati su singoli strati non superconduttori ultrasottili.

2006 - oggi. Applicazione della tecnica MBE laser per l'ingegneria delle strutture eteroepitassiali basate su superconduttori ad alta temperatura, ossidi magnetici, ed ossidi dielettrici di varie composizioni. Ampia indagine tramite sincrotrone delle proprietà dei film. Studio dell'interazione tra proprietà strutturali e fisiche in strati ultra sottili di ossido, compreso il meccanismo fisico all'origine della depressione delle proprietà di magnetotrasporto in manganiti spesse poche celle unitarie. Deposizione di film sottili ed eterostrutture con proprietà di trasporto avanzate per applicazioni nel campo delle micro Solid Oxide Fuel Cells (?SOFCs)

 

L'attività scientifica di Giuseppe Balestrino è provata da circa 200 pubblicazioni su riviste scientifiche internazionali. Giuseppe Balestrino è'stato relatore su invito in numerose conferenze internazionali e ha dato un plenary talk alla conferenza EUCAS'05 (settembre 2005, Vienna) riguardante la sua attività nel campo delle eterostrutture di superconduttori artificiali

Comitati scientifici e comitati organizzatori

Giuseppe Balestrino è stato membro del Comitato Scientifico di THIOX (applicazioni di film sottili di ossidi), network dell’ European Science Fundation. E ' stato membro dei comitati scientifici dell’ International Workshop on Oxide Electronics, di FOXE (Conferenza Nazionale sulla Elettronica degli Ossidi Funzionali) e SATT (Conferenza sulla Superconduttività ad Alta Temperatura).

Ha partecipato all'organizzazione di diversi incontri e conferenze in qualità di membro sia del Comitato Organizzatore o del Comitato Scientifico, tra questi la grande Conferenza Internazionale sulle Applicazione dell'Effetto Mössbauer (ICAME 85) ed EUCAS 2013.

Coordinamento di progetti di ricerca

 

G. Balestrino è stato responsabile di diversi programmi di cooperazione scientifica sia nazionale (prevalentemente finanziati dal Consiglio Nazionale delle Ricerche e dal Ministero dell'Università e della Ricerca, MIUR), ed internazionali.

Qui di seguito una selezione ristretta dei progetti finanziati:

• programma INTAS 96-0452 tra i paesi europei e in Russia (coordinatore locale).

• programma di cooperazione Galileo tra Italia e Francia (coordinatore nazionale).

• programma di cooperazione tra l'Università degli Studi di Roma Tor Vergata e MISIS di Mosca, 1992-1994 (Principal Investigator)).

• Progetto di Ricerca Avanzata dell'Istituto Nazionale di Fisica della Materia (PRA 1996): "Superconduttori ad alta temperatura e superreticoli" (Principal Investigator)

• Progetto di Rilevante Interesse Nazionale del MIUR (PRIN 1998): "Sintesi di nuovi materiali ad alta temperatura critica tramite tecniche di crescita di film sottili" (coordinatore scientifico).

 

Attività di valutazione scientifica

Giuseppe Balestrino ha agito come un valutatore di progetti di R & S per diverse organizzazioni nazionali ed internazionali, tra le quali:

° Valutatore del Ministero delle Attività Produttive per i programmi di ricerca industriale precompetitiva (Legge 46/82)

° Valutatore dell'INTAS (Associazione internazionale per la promozione della cooperazione con i ricercatori dei nuovi Stati indipendenti (NSI) dell'ex Unione Sovietica)

° Valutatore FWF (Fonds zur Förderung wissenshaftlichen Forschung, Austria)

° Valutatore della Organizzazione olandese per la ricerca scientifica, Scienze Chimiche.

E 'stato Commissario in diversi concorsi pubblici per posizioni a tempo indeterminato, sia presso il Consiglio Nazionale delle Ricerche che l'Università. Tra questi il concorso per 17 posti di Direttore di Ricerca nel settore delle Scienze Fisiche presso il Consiglio Nazionale delle Ricerche (bando CNR n. 3647, 2004)

Attività didattica

Attualmente Giuseppe Balestrino insegna il corso di Physics 2 (in inglese) per la laurea triennale in "Engineering Sciences” e Solid State Physics (in Inglese) per la laurea magistrale in Mathematical Engineering. Dal 2013 Giuseppe Balestrino è stato nominato responsabile del Master in inglese in "Mathematical Engineering” dell'Università degli Studi di Roma "Tor Vergata", un programma rivolto agli studenti di talento da Matematica, Fisica e Ingegneria.

Curriculum Vitae of Giuseppe Balestrino

 

 

 

 

The scientific activity of Giuseppe Balestrino is endorsed by more than 200 publications s, concerning the physics of new materials, and by a large number of presentations at international conferences.

He has been invited speaker in several international conferences and gave a plenary talk at the EUCAS'05 conference (September, 2005, Vienna) concerning his activity in the field of artificial superconducting heterostructures. In 2011 he has received the Ross Coffin Purdy Award from the American Ceramic Society for his achievements in the field of the growth of thin films of solid oxides ionic conductors..

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PHYSICAL REVIEW RESEARCH, 2(2) [10.1103/PhysRevResearch.2.023231].";s:4:"data";s:4:"2020";s:2:"id";s:20:"PUBBLICAZIONE_395201";s:6:"handle";s:11:"2108/251942";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:14:"Settore FIS/01";s:9:"metadata4";N;s:9:"metadata5";s:155:"Determining the electron-phonon coupling in superconducting cuprates by resonant inelastic x-ray scattering: methods and results on Nd1+xBa2−xCu3O7−δ";s:9:"metadata6";s:232:"Braicovich, L; Rossi, M; Fumagalli, R; Peng, Y; Wang, Y; Arpaia, R; Betto, D; De Luca, GM; Di Castro, D; Kummer, K; Moretti Sala, M; Pagetti, M; Balestrino, G; Brookes, NB; Salluzzo, M; Johnston, S; van den Brink, J; Ghiringhelli, G";s:9:"metadata7";s:32:"10.1103/PhysRevResearch.2.023231";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:1;a:14:{s:9:"citazione";s:258:"Schlueter, C., Yang, N., Mazzoli, C., Cantoni, C., Tebano, A., Di Castro, D., et al. (2020). Orbital hybridization and magnetic coupling at cuprate-manganite interfaces driven by manganite doping. ADVANCED QUANTUM TECHNOLOGIES, 3(6) [10.1002/qute.202000016].";s:4:"data";s:4:"2020";s:2:"id";s:20:"PUBBLICAZIONE_395199";s:6:"handle";s:11:"2108/251940";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:14:"Settore FIS/01";s:9:"metadata4";N;s:9:"metadata5";s:102:"Orbital hybridization and magnetic coupling at cuprate-manganite interfaces driven by manganite doping";s:9:"metadata6";s:164:"Schlueter, C; Yang, N; Mazzoli, C; Cantoni, C; Tebano, A; Di Castro, D; Balestrino, G; Orgiani, P; Galdi, A; Herrero-Martin, J; Gargiani, P; Valvidares, M; Aruta, C";s:9:"metadata7";s:22:"10.1002/qute.202000016";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:2;a:14:{s:9:"citazione";s:278:"Felici, R., Aruta, C., Yang, N., Zarotti, F., Foglietti, V., Cantoni, C., et al. (2019). Regular Network of Misfit Dislocations at the BaZr 0.8 Y 0.2 O 3−x /NdGaO 3 Interface and Its Role in Proton Conductivity. PHYSICA STATUS SOLIDI B-BASIC RESEARCH [10.1002/pssb.201800217].";s:4:"data";s:7:"2019-03";s:2:"id";s:20:"PUBBLICAZIONE_356494";s:6:"handle";s:11:"2108/218737";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:123:"Regular Network of Misfit Dislocations at the BaZr 0.8 Y 0.2 O 3−x /NdGaO 3 Interface and Its Role in Proton Conductivity";s:9:"metadata6";s:104:"Felici, R; Aruta, C; Yang, N; Zarotti, F; Foglietti, V; Cantoni, C; Tebano, A; Carlà, F; Balestrino, G";s:9:"metadata7";s:22:"10.1002/pssb.201800217";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:3;a:14:{s:9:"citazione";s:232:"Schlueter, C., Aruta, C., Yang, N., Tebano, A., Di Castro, D., Balestrino, G., et al. (2019). Tuning electronic reconstructions at the cuprate-manganite interface. PHYSICAL REVIEW MATERIALS, 3(9) [10.1103/PhysRevMaterials.3.094406].";s:4:"data";s:4:"2019";s:2:"id";s:20:"PUBBLICAZIONE_383217";s:6:"handle";s:11:"2108/241800";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:14:"Settore FIS/01";s:9:"metadata4";N;s:9:"metadata5";s:68:"Tuning electronic reconstructions at the cuprate-manganite interface";s:9:"metadata6";s:81:"Schlueter, C; Aruta, C; Yang, N; Tebano, A; Di Castro, D; Balestrino, G; Lee, aTL";s:9:"metadata7";s:33:"10.1103/PhysRevMaterials.3.094406";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:4;a:14:{s:9:"citazione";s:239:"Zarotti, F., Felici, R., Foglietti, V., Liu, Z., Yang, N., & Balestrino, G. (2019). Emerging proton conductivity at the interface between insulating NdGa O3 and BaZr O3. PHYSICAL REVIEW MATERIALS, 3(10) [10.1103/PhysRevMaterials.3.103606].";s:4:"data";s:4:"2019";s:2:"id";s:20:"PUBBLICAZIONE_369575";s:6:"handle";s:11:"2108/229808";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";s:86:"Barium zirconate; Laser ablation; Perovskites; Interfaces; Proton transport properties";s:9:"metadata3";s:14:"Settore FIS/03";s:9:"metadata4";N;s:9:"metadata5";s:84:"Emerging proton conductivity at the interface between insulating NdGa O3 and BaZr O3";s:9:"metadata6";s:67:"Zarotti, F; Felici, R; Foglietti, V; Liu, Z; Yang, N; Balestrino, G";s:9:"metadata7";s:33:"10.1103/PhysRevMaterials.3.103606";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:5;a:14:{s:9:"citazione";s:197:"Di Castro, D., & Balestrino, G. (2018). Superconductivity in interacting interfaces of cuprate-based heterostructures. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 31(7), 073001 [10.1088/1361-6668/aac246].";s:4:"data";s:7:"2018-06";s:2:"id";s:20:"PUBBLICAZIONE_353024";s:6:"handle";s:11:"2108/216115";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";s:91:"superconductivity; interface; high T-c superconductors; film deposition; low dimensionality";s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:77:"Superconductivity in interacting interfaces of cuprate-based heterostructures";s:9:"metadata6";s:27:"Di Castro, D; Balestrino, G";s:9:"metadata7";s:24:"10.1088/1361-6668/aac246";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:6;a:14:{s:9:"citazione";s:235:"Zarotti, F., Di Castro, D., Felici, R., & Balestrino, G. (2018). Structural differences between superconducting and non-superconducting CaCuO2/SrTiO3 interfaces. PHYSICA. B, CONDENSED MATTER, 539, 123-127 [10.1016/j.physb.2018.04.008].";s:4:"data";s:7:"2018-06";s:2:"id";s:20:"PUBBLICAZIONE_353030";s:6:"handle";s:11:"2108/216117";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:95:"Structural differences between superconducting and non-superconducting CaCuO2/SrTiO3 interfaces";s:9:"metadata6";s:50:"Zarotti, F; Di Castro, D; Felici, R; Balestrino, G";s:9:"metadata7";s:27:"10.1016/j.physb.2018.04.008";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:7;a:14:{s:9:"citazione";s:292:"Kuo, C.-., Lin, S.-., Ghiringhelli, G., Peng, Y., De Luca, G.M., Di Castro, D., et al. (2018). Depth-resolved resonant inelastic x-ray scattering at a superconductor/half-metallic-ferromagnet interface through standing wave excitation. PHYSICAL REVIEW. B, 98(23) [10.1103/PhysRevB.98.235146].";s:4:"data";s:4:"2018";s:2:"id";s:20:"PUBBLICAZIONE_352970";s:6:"handle";s:11:"2108/216073";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:139:"Depth-resolved resonant inelastic x-ray scattering at a superconductor/half-metallic-ferromagnet interface through standing wave excitation";s:9:"metadata6";s:268:"Kuo, C-; Lin, S-; Ghiringhelli, G; Peng, Y; De Luca, GM; Di Castro, D; Betto, D; Gehlmann, M; Wijnands, T; Huijben, M; Meyer-Ilse, J; Gullikson, E; Kortright, JB; Vailionis, A; Gauquelin, N; Verbeeck, J; Gerber, T; Balestrino, G; Brookes, NB; Braicovich, L; Fadley, CS";s:9:"metadata7";s:26:"10.1103/PhysRevB.98.235146";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:8;a:14:{s:9:"citazione";s:222:"Peng, Y.Y., Dellea, G., Minola, M., Conni, M., Amorese, A., Di Castro, D., et al. (2017). Influence of apical oxygen on the extent of in-plane exchange interaction in cuprate superconductors. NATURE PHYSICS, 13, 1201-1206.";s:4:"data";s:7:"2017-12";s:2:"id";s:20:"PUBBLICAZIONE_324778";s:6:"handle";s:11:"2108/194522";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:100:"Influence of apical oxygen on the extent of in-plane exchange interaction in cuprate superconductors";s:9:"metadata6";s:205:"Peng, YY; Dellea, G; Minola, M; Conni, M; Amorese, A; Di Castro, D; De Luca, GM; Kummer, K; Salluzzo, M; Sun, X; Zhou, XJ; Balestrino, G; Le Tacon, M; Keimer, B; Braicovich, L; Brookes, NB; Ghiringhelli, G";s:9:"metadata7";s:17:"10.1038/nphys4248";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:9;a:14:{s:9:"citazione";s:233:"Dellea, G., Minola, M., Galdi, A., Di Castro, D., Aruta, C., Brookes, N.B., et al. (2017). Spin and charge excitations in artificial hole- and electron-doped infinite layer cuprate superconductors. PHYSICAL REVIEW. B, 96(11), 115117.";s:4:"data";s:7:"2017-09";s:2:"id";s:20:"PUBBLICAZIONE_324785";s:6:"handle";s:11:"2108/194528";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:105:"Spin and charge excitations in artificial hole- and electron-doped infinite layer cuprate superconductors";s:9:"metadata6";s:226:"Dellea, G; Minola, M; Galdi, A; Di Castro, D; Aruta, C; Brookes, NB; Jia, CJ; Mazzoli, C; Moretti Sala, M; Moritz, B; Orgiani, P; Schlom, DG; Tebano, A; Balestrino, G; Braicovich, L; Devereaux, TP; Maritato, L; Ghiringhelli, G";s:9:"metadata7";s:26:"10.1103/PhysRevB.96.115117";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:10;a:14:{s:9:"citazione";s:221:"Foglietti, V., Yang, N., Aruta, C., Orgiani, P., Di Pietrantonio, F., Cannata, D., et al. (2017). Ion Charge Dynamics in Ceria-Based Metal Insulator Metal Structure. JOURNAL OF PHYSICAL CHEMISTRY. C, 121(42), 23406-23412.";s:4:"data";s:4:"2017";s:2:"id";s:20:"PUBBLICAZIONE_324784";s:6:"handle";s:11:"2108/199719";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:36:"Settore FIS/01 - Fisica Sperimentale";s:9:"metadata4";s:858:"This paper reports on the room temperature ambipolar diffusion of oxygen vacancies and electrons in epitaxial films of pure CeO2 and 20% Sm-doped CeO2 a few tens of nanometers thick. To this aim, we fabricated heteroepitaxial structures consisting of an epitaxial ceria film sandwiched between a Pt upper electrode and a conducting substrate of Nb-doped SrTiO3 (lower electrode). The observed decay of the electrical conductivity was investigated. In particular, following this approach, we could measure room temperature diffusion coefficient in thin monocrystalline dielectric layers. While pure ceria is interesting for memory device applications, in doped ceria the resistive switching involves diffusion mechanisms that occur on much longer time scales. Under this respect, doped ceria is particularly suitable to be used in artificial neuronal devices.";s:9:"metadata5";s:66:"Ion Charge Dynamics in Ceria-Based Metal Insulator Metal Structure";s:9:"metadata6";s:102:"Foglietti, V; Yang, N; Aruta, C; Orgiani, P; Di Pietrantonio, F; Cannata, D; Benetti, M; Balestrino, G";s:9:"metadata7";s:24:"10.1021/acs.jpcc.7b04409";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:11;a:14:{s:9:"citazione";s:239:"Yang, N., Orgiani, P., Di Bartolomeo, E., Foglietti, V., Torelli, P., Ievlev, A., et al. (2017). Effects of dopant ionic radius on cerium reduction in epitaxial cerium oxide thin films. JOURNAL OF PHYSICAL CHEMISTRY. C, 121(16), 8841-8849.";s:4:"data";s:4:"2017";s:2:"id";s:20:"PUBBLICAZIONE_315389";s:6:"handle";s:11:"2108/184338";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:87:"Effects of dopant ionic radius on cerium reduction in epitaxial cerium oxide thin films";s:9:"metadata6";s:134:"Yang, N; Orgiani, P; Di Bartolomeo, E; Foglietti, V; Torelli, P; Ievlev, A; Rossi, G; Licoccia, S; Balestrino, G; Kalinin, S; Aruta, C";s:9:"metadata7";s:24:"10.1021/acs.jpcc.7b00386";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:12;a:14:{s:9:"citazione";s:236:"Foglietti, V., Yang, N., Aruta, C., Di Pietrantonio, F., Cannata, D., Benetti, M., et al. (2016). High plasticity reversible resistive switching in heteroepitaxial metal/CeO2-x/Nb:SrTiO3/Ti/Pt structures. NANOTECHNOLOGY, 27(37), 375705.";s:4:"data";s:4:"2016";s:2:"id";s:20:"PUBBLICAZIONE_315191";s:6:"handle";s:11:"2108/184154";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:105:"High plasticity reversible resistive switching in heteroepitaxial metal/CeO2-x/Nb:SrTiO3/Ti/Pt structures";s:9:"metadata6";s:90:"Foglietti, V; Yang, N; Aruta, C; Di Pietrantonio, F; Cannata, D; Benetti, M; Balestrino, G";s:9:"metadata7";s:30:"10.1088/0957-4484/27/37/375705";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:13;a:14:{s:9:"citazione";s:271:"Yang, N., Di Bartolomeo, E., Foglietti, V., Cantoni, C., Belianinov, A., Tebano, A., et al. (2016). Microstructure and compositional defects affects proton conductivity and reactions in Y-doped BaZrO3 thin films. ECS TRANSACTIONS, 72(7), 149-158 [10.1149/07207.0149ecst].";s:4:"data";s:4:"2016";s:2:"id";s:20:"PUBBLICAZIONE_315182";s:6:"handle";s:11:"2108/184143";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:111:"Microstructure and compositional defects affects proton conductivity and reactions in Y-doped BaZrO3 thin films";s:9:"metadata6";s:150:"Yang, N; Di Bartolomeo, E; Foglietti, V; Cantoni, C; Belianinov, A; Tebano, A; Licoccia, S; Lee, T; Schlueter, C; Kalinin, SV; Balestrino, G; Aruta, C";s:9:"metadata7";s:22:"10.1149/07207.0149ecst";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:14;a:14:{s:9:"citazione";s:299:"Yang, N., Shi, Y., Schweiger, S., Strelcov, E., Belianinov, A., Foglietti, V., et al. (2016). Role of Associated Defects in Oxygen Ion Conduction and Surface Exchange Reaction for Epitaxial Samaria-Doped Ceria Thin Films as Catalytic Coatings. ACS APPLIED MATERIALS & INTERFACES, 8(23), 14613-14621.";s:4:"data";s:4:"2016";s:2:"id";s:20:"PUBBLICAZIONE_315186";s:6:"handle";s:11:"2108/184146";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:148:"Role of Associated Defects in Oxygen Ion Conduction and Surface Exchange Reaction for Epitaxial Samaria-Doped Ceria Thin Films as Catalytic Coatings";s:9:"metadata6";s:129:"Yang, N; Shi, Y; Schweiger, S; Strelcov, E; Belianinov, A; Foglietti, V; Orgiani, P; Balestrino, G; Kalinin, S; Rupp, J; Aruta, C";s:9:"metadata7";s:22:"10.1021/acsami.6b03909";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:15;a:14:{s:9:"citazione";s:215:"Di Castro, D., Cantoni, C., Ridolfi, F., Aruta, C., Tebano, A., Yang, N., et al. (2015). High- Tc Superconductivity at the Interface between the CaCuO2 and SrTiO3 Insulating Oxides. PHYSICAL REVIEW LETTERS, 115(14).";s:4:"data";s:7:"2015-09";s:2:"id";s:20:"PUBBLICAZIONE_251479";s:6:"handle";s:11:"2108/131231";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";s:492:"Calcium; Electron energy levels; Electron energy loss spectroscopy; Electron scattering; Electronic properties; Energy dissipation; High resolution transmission electron microscopy; Insulation; Scanning electron microscopy; Strontium titanates; Transmission electron microscopy, Apical oxygen; Complex oxides; Electronic systems; High-Tc cuprates; High-Tc superconductivity; Scanning transmission electron microscopy; Spatial profiles; Superconducting state, Interface states";s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:91:"High- Tc Superconductivity at the Interface between the CaCuO2 and SrTiO3 Insulating Oxides";s:9:"metadata6";s:81:"Di Castro, D; Cantoni, C; Ridolfi, F; Aruta, C; Tebano, A; Yang, N; Balestrino, G";s:9:"metadata7";s:30:"10.1103/PhysRevLett.115.147001";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:16;a:14:{s:9:"citazione";s:200:"Cantoni, C., Di Castro, D., & Balestrino, G. (2015). Oxygen Intercalation and Doping-Induced 2D High-Tc Superconductivity at the CaCuO2/SrTiO3 Interface. MICROSCOPY AND MICROANALYSIS, 21(S3), 497-498.";s:4:"data";s:4:"2015";s:2:"id";s:20:"PUBBLICAZIONE_326874";s:6:"handle";s:11:"2108/194611";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:99:"Oxygen Intercalation and Doping-Induced 2D High-Tc Superconductivity at the CaCuO2/SrTiO3 Interface";s:9:"metadata6";s:39:"Cantoni, C; Di Castro, D; Balestrino, G";s:9:"metadata7";s:25:"10.1017/S1431927615003281";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:17;a:14:{s:9:"citazione";s:262:"Di Castro, D., & Balestrino, G. (2015). High TC superconductivity in engineered cuprate heterostructures. In T.E. P. Mele (a cura di), Oxide Thin Films, Multilayers, and Nanocomposites (pp. 39-68). Springer International Publishing [10.1007/978-3-319-14478-8_3].";s:4:"data";s:4:"2015";s:2:"id";s:20:"PUBBLICAZIONE_251481";s:6:"handle";s:11:"2108/131250";s:9:"metadata1";s:19:"Contributo in libro";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:64:"High TC superconductivity in engineered cuprate heterostructures";s:9:"metadata6";s:28:"Di Castro, D; Balestrino, G";s:9:"metadata7";s:27:"10.1007/978-3-319-14478-8_3";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:18;a:14:{s:9:"citazione";s:286:"Lavini, F., Yang, N., Vasudevan, R.K., Strelcov, E., Jesse, S., Okatan, M., et al. (2015). Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films. NANOTECHNOLOGY, 26(32), 325302 [10.1088/0957-4484/26/32/325302].";s:4:"data";s:4:"2015";s:2:"id";s:20:"PUBBLICAZIONE_251480";s:6:"handle";s:11:"2108/131411";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";s:376:"Electrochemical oxidation; Oxidation; Oxygen; Pulsed laser deposition; Scanning probe microscopy, AFM lithography; Direct-write lithography; Electrochemical process; Environmental conditions; Interstitial oxygen; Lanthanum cuprates; Local oxidation; Thin epitaxial films, Thin films; AFM lithography; surface electrochemical processes; tip-induced local oxidation";s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";s:500:"Scanning probe bias techniques have been used as a method to locally dope thin epitaxial films of La2CuO4 (LCO) fabricated by pulsed laser deposition. The local electrochemical oxidation of LCO very efficiently introduces interstitial oxygen defects in the thin film. Details on the influence of the tip voltage bias and environmental conditions on the surface morphology have been investigated. The results show that a local uptake of oxygen occurs in the oxidized films. © 2015 IOP Publishing Ltd.";s:9:"metadata5";s:129:"Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films";s:9:"metadata6";s:147:"Lavini, F; Yang, N; Vasudevan, RK; Strelcov, E; Jesse, S; Okatan, M; Kravchenko, I; DI CASTRO, D; Kalinin, S; BALESTRINO, G; Aruta, C; Foglietti, V";s:9:"metadata7";s:30:"10.1088/0957-4484/26/32/325302";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:19;a:14:{s:9:"citazione";s:230:"SALVATO, M., Tieri, G., BALESTRINO, G., & DI CASTRO, D. (2015). Anisotropic properties of a single superconducting CaCuO2/SrTiO3 interface. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 28(9), 095012-095018 [10.1088/0953-2048/28/9/095012].";s:4:"data";s:4:"2015";s:2:"id";s:20:"PUBBLICAZIONE_234851";s:6:"handle";s:11:"2108/116146";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";s:1070:"The transport properties of CaCuO2/SrTiO3 single interfaces are studied by resistance versus temperature measurements in external magnetic fields. The superconducting anisotropy $gamma ={\xi }_{a-b}/{\xi }_{c},$ where ${\xi }_{a-b}$ and ${\xi }_{c}$ are the superconducting coherence lengths parallel and perpendicular to the interface, respectively, shows values higher than that previously obtained for CaCuO2/SrTiO3 superlattices deposited in the same conditions. The larger anisotropy, observed for the single interfaces, indicates that the charge carriers are confined inside a thin superconducting layer next to the interface rather than spread throughout the whole CaCuO2 block. The activation energy and the irreversibility line confirm this hypothesis, suggesting that quasi two-dimensional transport is dominant in this system. The interpretation of the experimental data in the framework of the Berezinskii?Kosterlitz?Thouless theory confirms that the thickness of the superconducting sheet layer is about 1 nm, corresponding roughly to two CaCuO2 unit cells.";s:9:"metadata5";s:74:"Anisotropic properties of a single superconducting CaCuO2/SrTiO3 interface";s:9:"metadata6";s:49:"SALVATO, M; Tieri, G; BALESTRINO, G; DI CASTRO, D";s:9:"metadata7";s:29:"10.1088/0953-2048/28/9/095012";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:20;a:14:{s:9:"citazione";s:257:"Yang, N., Cantoni, C., Foglietti, V., TEBANO, A., Belianinov, A., Strelcov, E., et al. (2015). Defective Interfaces in Yttrium-Doped Barium Zirconate Films and Consequences on Proton Conduction. NANO LETTERS, 15(4), 2343-2349 [10.1021/acs.nanolett.5b00698].";s:4:"data";s:4:"2015";s:2:"id";s:20:"PUBBLICAZIONE_251482";s:6:"handle";s:11:"2108/131396";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";s:636:"Activation energy; Barium; Defects; Dislocations (crystals); Electrochemical impedance spectroscopy; Electrolytes; Interfaces (materials); Ionic conduction; Oxide films; Scanning electron microscopy; Thin films; Transmission electron microscopy; Transport properties; Yttrium, Electric transport properties; Electrochemical investigations; Electrochemical strain microscopies; Interface defects; Perovskite oxide thin films; Scanning transmission electron microscopy; SPM; STEM, Barium zirconate; doped barium zirconate; electrolytes; interface defects; ionic conduction; perovskite oxide thin films; SPM; STEM";s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";s:1094:"Yttrium-doped barium zirconate (BZY) thin films recently showed surprising electric transport properties. Experimental investigations conducted mainly by electrochemical impedance spectroscopy suggested that a consistent part of this BZY conductivity is of protonic nature. These results have stimulated further investigations by local unconventional techniques. Here, we use electrochemical strain microscopy (ESM) to detect electrochemical activity in BZY films with nanoscale resolution. ESM in a novel cross-sectional measuring setup allows the direct visualization of the interfacial activity. The local electrochemical investigation is compared with the structural studies performed by state of art scanning transmission electron microscopy (STEM). The ESM and STEM results show a clear correlation between the conductivity and the interface structural defects. We propose a physical model based on a misfit dislocation network that introduces a novel 2D transport phenomenon, whose fingerprint is the low activation energy measured. (Figure Presented). © 2015 American Chemical Society.";s:9:"metadata5";s:98:"Defective Interfaces in Yttrium-Doped Barium Zirconate Films and Consequences on Proton Conduction";s:9:"metadata6";s:164:"Yang, N; Cantoni, C; Foglietti, V; TEBANO, A; Belianinov, A; Strelcov, E; Jesse, S; DI CASTRO, D; DI BARTOLOMEO, E; LICOCCIA, S; Kalinin, S; BALESTRINO, G; Aruta, C";s:9:"metadata7";s:28:"10.1021/acs.nanolett.5b00698";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:21;a:14:{s:9:"citazione";s:283:"Yang, N., Strelcov, E., Belianinov, A., Tebano, A., Foglietti, V., Schlueter, C., et al. (2015). Effect of water adsorption on conductivity in epitaxial Sm0.1Ce0.9O2-δ thin film for micro solid oxide fuel cells applications. ECS TRANSACTIONS, 69(16), 39-48 [10.1149/06916.0039ecst].";s:4:"data";s:4:"2015";s:2:"id";s:20:"PUBBLICAZIONE_403952";s:6:"handle";s:11:"2108/260037";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:14:"Settore FIS/03";s:9:"metadata4";N;s:9:"metadata5";s:127:"Effect of water adsorption on conductivity in epitaxial Sm0.1Ce0.9O2-δ thin film for micro solid oxide fuel cells applications";s:9:"metadata6";s:131:"Yang, N; Strelcov, E; Belianinov, A; Tebano, A; Foglietti, V; Schlueter, C; Lee, TL; Jesse, S; Kalinin, SV; Balestrino, G; Aruta, C";s:9:"metadata7";s:22:"10.1149/06916.0039ecst";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:22;a:14:{s:9:"citazione";s:246:"Yang, N., Belianinov, A., Strelcov, E., Tebano, A., Foglietti, V., Di Castro, D., et al. (2014). Effect of doping on surface reactivity and conduction mechanism in samarium-doped ceria thin films. ACS NANO, 8(12), 12494-12501 [10.1021/nn505345c].";s:4:"data";s:7:"2014-12";s:2:"id";s:20:"PUBBLICAZIONE_230788";s:6:"handle";s:11:"2108/116248";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:98:"Effect of doping on surface reactivity and conduction mechanism in samarium-doped ceria thin films";s:9:"metadata6";s:168:"Yang, N; Belianinov, A; Strelcov, E; Tebano, A; Foglietti, V; Di Castro, D; Schlueter, C; Lee, T-; Baddorf, AP; Balke, N; Jesse, S; Kalinin, SV; Balestrino, G; Aruta, C";s:9:"metadata7";s:17:"10.1021/nn505345c";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:23;a:14:{s:9:"citazione";s:268:"Yang, N., Tebano, A., Di Castro, D., Balestrino, G., D'Epifanio, A., Licoccia, S., et al. (2014). Deposition and electrochemical characterization of Yttrium doped Barium cerate and zirconate heterostructures. THIN SOLID FILMS, 562, 264-268 [10.1016/j.tsf.2014.04.073].";s:4:"data";s:10:"2014-07-01";s:2:"id";s:20:"PUBBLICAZIONE_198307";s:6:"handle";s:10:"2108/95370";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:109:"Deposition and electrochemical characterization of Yttrium doped Barium cerate and zirconate heterostructures";s:9:"metadata6";s:92:"Yang, N; Tebano, A; Di Castro, D; Balestrino, G; D'Epifanio,A; Licoccia, S; Di Bartolomeo, E";s:9:"metadata7";s:25:"10.1016/j.tsf.2014.04.073";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:24;a:14:{s:9:"citazione";s:221:"Di Castro, D., Aruta, C., Tebano, A., Innocenti, D., Minola, M., Sala, M.M., et al. (2014). T-c up to 50 K in superlattices of insulating oxides. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 27(4) [10.1088/0953-2048/27/4/044016].";s:4:"data";s:7:"2014-04";s:2:"id";s:20:"PUBBLICAZIONE_198310";s:6:"handle";s:10:"2108/95373";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:52:"T-c up to 50 K in superlattices of insulating oxides";s:9:"metadata6";s:109:"Di Castro, D; Aruta, C; Tebano, A; Innocenti, D; Minola, M ; Sala, MM; Prellier, W; Lebedev, O; Balestrino, G";s:9:"metadata7";s:29:"10.1088/0953-2048/27/4/044016";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:25;a:14:{s:9:"citazione";s:208:"Foglietti, V., Yang, N., Tebano, A., Aruta, C., Di Bartolomeo, E., Licoccia, S., et al. (2014). Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties. APPLIED PHYSICS LETTERS, 104(8).";s:4:"data";s:10:"2014-02-24";s:2:"id";s:20:"PUBBLICAZIONE_206807";s:6:"handle";s:10:"2108/99147";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:78:"Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties";s:9:"metadata6";s:100:"Foglietti, V; Yang, N; Tebano, A; Aruta, C; Di Bartolomeo, E; Licoccia, S; Cantoni, C; Balestrino, G";s:9:"metadata7";s:17:"10.1063/1.4867020";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:26;a:14:{s:9:"citazione";s:172:"Yang, N., Doria, S., Kumar, A., Jang, J.H., Arruda, T.M., Tebano, A., et al. (2014). Water-mediated electrochemical nano-writing on thin ceria films. NANOTECHNOLOGY, 25(7).";s:4:"data";s:10:"2014-02-21";s:2:"id";s:20:"PUBBLICAZIONE_206815";s:6:"handle";s:10:"2108/99148";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:63:"Water-mediated electrochemical nano-writing on thin ceria films";s:9:"metadata6";s:165:"Yang, N; Doria, S; Kumar, A; Jang, JH; Arruda, TM; Tebano, A; Jesse, S; Ivanov, IN; Baddorf, AP; Strelcov, E; Licoccia, S; Borisevich, AY; Balestrino, G; Kalinin, SV";s:9:"metadata7";N;s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:27;a:14:{s:9:"citazione";s:241:"Di Castro, D., Caramazza, S., Innocenti, D., Balestrino, G., Marini, C., Dore, P., et al. (2013). Raman spectroscopy study of the interface structure in (CaCuO2)n/(SrTiO3)m superlattices. APPLIED PHYSICS LETTERS, 103(19) [10.1063/1.4828358].";s:4:"data";s:7:"2013-11";s:2:"id";s:20:"PUBBLICAZIONE_168781";s:6:"handle";s:10:"2108/81589";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:37:"Settore FIS/03 - Fisica della Materia";s:9:"metadata4";N;s:9:"metadata5";s:88:"Raman spectroscopy study of the interface structure in (CaCuO2)n/(SrTiO3)m superlattices";s:9:"metadata6";s:89:"Di Castro, D; Caramazza, S; Innocenti, D; Balestrino, G; Marini, C; Dore, P; Postorino, P";s:9:"metadata7";s:17:"10.1063/1.4828358";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:28;a:14:{s:9:"citazione";s:231:"Doria, S., Yang, N., Kumar, A., Jesse, S., Tebano, A., Aruta, C., et al. (2013). Nanoscale mapping of oxygen vacancy kinetics in nanocrystalline Samarium doped ceria thin films. 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