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Matthias Auf der Maur è nato a Lucerna, Svizzera, nel 1977. Ha conseguito il diploma in Ingegneria Elettronica presso il Politecnico Federale di Zurigo (ETH) nel 2003 con specializzazione in elettronica delle microonde. Dopo il diploma ha lavorato per nove mesi al laboratori per l'elettronica alle microonde dell'ETH. Nel 2008 ha ottenuto il dottorato in Microelettronica e Telecomunicazioni al Dip. di Ingegneria Elettronica dell'Università di Roma Tor Vergata. Dopo il dottorato ha proseguito la sua attività di ricerca nel gruppo di optoelettronica della stessa Università prima con un assegno di ricerca e dal 2010 come ricercatore a tempo determinato.

Matthias Auf der Maur was born in 1977 in Lucerne, Switzerland. In 2003 he got his diploma in electrical engineering from the Swiss Federal Institute of Technology (ETH) in Zurich. After his diploma he worked for 9 month with the Laboratory for Microwave Electronics of the ETH as research assistant. From 2004 to 2008 he did a PhD at the optoelectronics laboratory, University of Rome "Tor Vergata". Since 2008 he is a researcher with the Dept. of Electronics engineering of University of Rome "Tor Vergata".

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Electromechanical field effects in InAs/GaAs quantum dots based on continuum k→·p→ and atomistic tight-binding methods. COMPUTATIONAL MATERIALS SCIENCE, 197, 110678 [10.1016/j.commatsci.2021.110678].";s:4:"data";s:4:"2021";s:2:"id";s:20:"PUBBLICAZIONE_429481";s:6:"handle";s:11:"2108/283077";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";N;s:9:"metadata3";s:18:"Settore ING-INF/01";s:9:"metadata4";N;s:9:"metadata5";s:123:"Electromechanical field effects in InAs/GaAs quantum dots based on continuum k→·p→ and atomistic tight-binding methods";s:9:"metadata6";s:78:"Barettin, D; Pecchia, A; Auf der Maur, M; Di Carlo, A; Lassen, B; Willatzen, M";s:9:"metadata7";s:31:"10.1016/j.commatsci.2021.110678";s:9:"metadata8";N;s:9:"metadata9";N;s:10:"metadata10";N;}i:2;a:14:{s:9:"citazione";s:209:"Canals, J., Franch, N., Moro, V., Moreno, S., Prades, J.D., Romano-Rodríguez, A., et al. (2021). A Novel Approach for a Chip-Sized Scanning Optical Microscope. 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ACS APPLIED MATERIALS & INTERFACES, 11(51), 48021-48028 [10.1021/acsami.9b16457].";s:4:"data";s:4:"2019";s:2:"id";s:20:"PUBBLICAZIONE_365973";s:6:"handle";s:11:"2108/226890";s:9:"metadata1";s:19:"Articolo su rivista";s:9:"metadata2";s:119:"2D materials; ZrS3; exfoliation; perovskite light-emitting diodes; slot-die printing; transition metal trichalcogenides";s:9:"metadata3";s:32:"Settore ING-INF/01 - Elettronica";s:9:"metadata4";s:1316:"Liquid-phase exfoliation of zirconium trisulfide (ZrS3) was used to produce stable and ready-to-use inks for solution-processed semiconductor thin-film deposition. Ribbon-like layered crystals of ZrS3 were produced by the chemical vapor transport method and were then exfoliated in three different solvents: dimethylformamide, ethanol, and isopropyl alcohol. The resulting ZrS3 dispersions were compared for stability and the ability to form continuous films on top of the perovskite layer in light-emitting diodes with the ITO/PEDOT:PSS/MAPbBr3/2D-ZrS3/LiF/Al structure. Film deposition was performed by using either spray or slot-die coating methods. The slot-die coating route proved to produce better and more uniform films with respect to spray coating. We found that the 2D ZrS3 electron injection layer (EIL) stabilized the interface between the perovskite and LiF/Al cathode, reducing the turn-on voltage to 2.8 V and showing a luminance that does not degrade during voltage sweep. On the other hand, EIL-free devices show electroluminescence on the first voltage sweep that reduces almost to zero in the subsequent sweeps. 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