Fabrizio Arciprete

Qualifica
ASSOCIATO CONFERMATO
Fonte dei dati: Archivio della Ricerca http://art.torvergata.it
  1. Wang, R., Calarco, R., Arciprete, F., & Bragaglia, V. (2022). Epitaxial growth of GeTe/Sb2Te3 superlattices. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 137 [10.1016/j.mssp.2021.106244]. Dettagli
  2. Freitas, W., D'Epifanio, A., Ficca, V., Placidi, E., Arciprete, F., & Mecheri, B. (2021). Tailoring active sites of iron-nitrogen-carbon catalysts for oxygen reduction in alkaline environment: Effect of nitrogen-based organic precursor and pyrolysis atmosphere. ELECTROCHIMICA ACTA, 391 [10.1016/j.electacta.2021.138899]. Dettagli
  3. Tisbi, E., Placidi, E., Magri, R., Prosposito, P., Francini, R., Zaganelli, A., et al. (2020). Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys. PHYSICAL REVIEW APPLIED, 14(1), 014028 [10.1103/PhysRevApplied.14.014028]. Dettagli
  4. Mio, A.M., Privitera, S., Zimbone, M., Bragaglia, V., Jacobs, S., Persch, C., et al. (2020). Disordering process of GeSb2Te4 induced by ion irradiation. JOURNAL OF PHYSICS D. APPLIED PHYSICS, 53(13), 134001. Dettagli
  5. Shahbazi Farahani, F., D'Epifanio, A., Majidi, M.R., Placidi, E., Arciprete, F., & Mecheri, B. (2020). Tailoring morphology and structure of manganese oxide nanomaterials to enhance oxygen reduction in microbial fuel cells. SYNTHETIC METALS, 268, 116487. Dettagli
  6. Cecchi, S., Dragoni, D., Kriegner, D., Tisbi, E., Zallo, E., Arciprete, F., et al. (2019). Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys. ADVANCED FUNCTIONAL MATERIALS, 29(2), 1805184. Dettagli
  7. Colonna, S., Sessi, V., Placidi, E., Ronci, F., Jimenez, E., & Arciprete, F. (2019). Two-dimensional antiferromagnetic ordering of the Mn/GaAs(001) interface. PHYSICAL REVIEW. B, 99(11), 115311 [10.1103/PhysRevB.99.115311]. Dettagli
  8. Di Biagio, F., Cecchi, S., Arciprete, F., & Calarco, R. (2019). Crystallization Study of Ge-Rich (GeTe) m (Sb 2 Te 3 ) n Using Two-Step Annealing Process. PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, 13(4), 1800632 [10.1002/pssr.201800632]. Dettagli
  9. Francolini, I., Perugini, E., Silvestro, I., Lopreiato, M., d'Abusco, A.S., Valentini, F., et al. (2019). Graphene oxide oxygen content affects physical and biological properties of scaffolds based on Chitosan/graphene oxide conjugates. MATERIALS, 12(7), 1142 [10.3390/ma12071142]. Dettagli
  10. Honolka, J., Hogan, C., Vondracek, M., Polyak, Y., Arciprete, F., & Placidi, E. (2019). Electronic properties of GaAsBi(001) alloys at low Bi content. PHYSICAL REVIEW MATERIALS, 3(4), 044601 [10.1103/PhysRevMaterials.3.044601]. Dettagli
  11. Bragaglia, V., Arciprete, F., Mio, A.M., & Calarco, R. (2018). Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering. JOURNAL OF APPLIED PHYSICS, 123(21), 215304 [10.1063/1.5024047]. Dettagli
  12. Mecheri, B., Ficca, V., Costa de Oliveira, M.A., D'Epifanio, A., Placidi, E., Arciprete, F., et al. (2018). Facile synthesis of graphene-phthalocyanine composites as oxygen reduction electrocatalysts in microbial fuel cells. APPLIED CATALYSIS. B, ENVIRONMENTAL, 237, 699-707 [10.1016/j.apcatb.2018.06.031]. Dettagli
  13. Shahbazi Farahani, F., Mecheri, B., Reza Majidi, M., Costa de Oliveira, M.A., D'Epifanio, A., Zurlo, F., et al. (2018). MnOx-based electrocatalysts for enhanced oxygen reduction in microbial fuel cell air cathodes. JOURNAL OF POWER SOURCES, 390, 45-53. Dettagli
  14. Verona, C., Arciprete, F., Foffi, M., Limiti, E., Marinelli, M., Placidi, E., et al. (2018). Influence of surface crystal-orientation on transfer doping of V2O5/H-terminated diamond. APPLIED PHYSICS LETTERS, 112(18), 181602 [10.1063/1.5027198]. Dettagli
  15. Zallo, E., Cecchi, S., Boschker, J., Mio, A., ARCIPRETE, F., Privitera, S., et al. (2017). Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys. SCIENTIFIC REPORTS, 7(1), 1466 [10.1038/s41598-017-01502-z]. Dettagli
  16. ARCIPRETE, F., & Calarco, R. (2017). A special section on effects of strain in semiconductor heterostructures. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 9(7), 1064-1065 [10.1166/nnl.2017.2439]. Dettagli
  17. Boschker, ., Tisbi, E., E, ., Placidi, E., Momand, J., Redaelli, A., et al. (2017). Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy. AIP ADVANCES, 7(1), 015106 [10.1063/1.4974464]. Dettagli
  18. Costa de Oliveira, M., Mecheri, B., D'Epifanio, A., Placidi, E., Arciprete, F., Valentini, F., et al. (2017). Graphene oxide nanoplatforms to enhance catalytic performance of iron phthalocyanine for oxygen reduction reaction in bioelectrochemical systems. JOURNAL OF POWER SOURCES, 356, 381-388. Dettagli
  19. LATINI, V., Placidi, E., Magri, R., TISBI, E., PATELLA, F., & ARCIPRETE, F. (2017). Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 9(7), 1083-1094 [10.1166/nnl.2017.2444]. Dettagli
  20. LATINI, V., TISBI, E., Placidi, E., PATELLA, F., Biccari, F., Gurioli, M., et al. (2017). Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters. JOURNAL OF CRYSTAL GROWTH, 457, 177-183 [10.1016/j.jcrysgro.2016.06.045]. Dettagli
  21. Mio, A., Privitera, S., Bragaglia, V., ARCIPRETE, F., Bongiorno, C., Calarco, R., et al. (2017). Chemical and structural arrangement of the trigonal phase in GeSbTe thin films. NANOTECHNOLOGY, 28(6), 065706 [10.1088/1361-6528/28/6/065706]. Dettagli
  22. Mio, A., Privitera, S., Bragaglia, V., ARCIPRETE, F., Cecchi, S., Litrico, G., et al. (2017). Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures. SCIENTIFIC REPORTS, 7(1), 2616 [10.1038/s41598-017-02710-3]. Dettagli
  23. Bragaglia, V., Holldack, K., Boschker, J., ARCIPRETE, F., Zallo, E., Flissikowski, T., et al. (2016). Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2 Te3 Alloys. SCIENTIFIC REPORTS, 6, 28560 [10.1038/srep28560]. Dettagli
  24. Bragaglia, V., Arciprete, F., Zhang, W., Mio, A., Zallo, E., Perumal, K., et al. (2016). Metal - insulator transition driven by vacancy ordering in GeSbTe phase change materials. SCIENTIFIC REPORTS, 6, 23843 [10.1038/srep23843]. Dettagli
  25. FANFONI, M., FILABOZZI, A., Placidi, E., PATELLA, F., BALZAROTTI, A., & ARCIPRETE, F. (2016). 2D Voronoi tessellation generated by lines and belts of dots. PHYSICS LETTERS A, 380(3), 516-519 [10.1016/j.physleta.2015.11.008]. Dettagli
  26. LATINI, V., Placidi, E., ARCIPRETE, F., TISBI, E., PATELLA, F., & Magri, R. (2016). Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots. JOURNAL OF APPLIED PHYSICS, 120(12), 125704 [10.1063/1.4963126]. Dettagli
  27. TISBI, E., LATINI, V., PATELLA, F., Placidi, E., & ARCIPRETE, F. (2016). Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots. JOURNAL OF APPLIED PHYSICS, 120(23), 235303 [10.1063/1.4972033]. Dettagli
  28. Latini, V., Placidi, E., ARCIPRETE, F., & PATELLA, F. (2015). In-line correlation and ordering of InAs/GaAs multistacked Quantum Dots structures. JOURNAL OF CRYSTAL GROWTH, 419, 138-142 [10.1016/j.jcrysgro.2015.03.006]. Dettagli
  29. Placidi, E., ARCIPRETE, F., Sarti, F., Gurioli, M., Vinattieri, A., & PATELLA, F. (2015). Single QD emission from arrays of QD chains obtained by patterning-free method. ADVANCED DEVICE MATERIALS, 1(1), 33-37. Dettagli
  30. Placidi, E., ARCIPRETE, F., Latini, V., Latini, S., Magri, R., Scuderi, M., et al. (2014). Manipulating surface diffusion and elastic interactions to obtain Quantum Dot Multilayer arrangements over different length scales. APPLIED PHYSICS LETTERS, 105(11), 111905 [10.1063/1.4896028]. Dettagli
  31. Magri, R., Placidi, E., Arciprete, F., & Patella, F. (2014). Selective Growth of InAs Quantum Dots on GaAs driven by As kinetics. CRYSTAL RESEARCH AND TECHNOLOGY, 49(8), 546-551 [10.1002/crat.201300426]. Dettagli
  32. Arciprete, F., De Angelis, R., De Matteis, F., Persichetti, L., Placidi, E., Prosposito, P., et al. (2013). Guide d'onda: fabbricazione e caratterizzazione. In L. Catena, F. Berrilli, I. Davoli, & P. Prosposito (a cura di), STUDENTI-RICERCATORI per cinque giorni "Stage a Tor Vergata" (pp. 169-202). Milano : Springer Verlag Italia s.r.l.. Dettagli
  33. Arciprete, F., Placidi, E., Magri, R., Del Gaudio, D., & Patella, F. (2013). Kinetically Driven Selective Growth of InAs Quantum Dots on GaAs. JOURNAL OF MATERIALS RESEARCH, 28(23), 3201-3209 [10.1557/jmr.2013.340]. Dettagli
  34. Arciprete, F., Placidi, E., Magri, R., Fanfoni, M., Balzarotti, A., & Patella, F. (2013). Role of As in the anisotropic positioning of self-assembled InAs quantum dots. In I. Berbezier, J. Aqua, J. Floro, & A. Kuznetsov (a cura di), 2013 MRS Spring meeting: Symposium R, Nanostructured semiconductors and nanotechnology (pp. 3-9). MATERIALS RESEARCH SOCIETY [10.1557/opl.2013.892]. Dettagli
  35. Arciprete, F., Placidi, E., Magri, R., Fanfoni, M., Balzarotti, A., & Patella, F. (2013). The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs. ACS NANO, 7(5), 3868-3875 [10.1021/nn401338v]. Dettagli
  36. Fanfoni, M., Patella, F., Tomellini, M., & Arciprete, F. (2012). I fenomeni fisici e chimici irreversibili: La diffusione. LETTERA MATEMATICA PRISTEM, 83(6), 34-39. Dettagli
  37. Placidi, E., Arciprete, F., Balzarotti, A., & Patella, F. (2012). Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy. APPLIED PHYSICS LETTERS, 101(14), 141901-141903 [10.1063/1.4756896]. Dettagli
  38. Fanfoni, M., Arciprete, F., Tirabassi, C., Del Gaudio, D., Filabozzi, A., Balzarotti, A., et al. (2012). Coarsening effect on island-size scaling: The model case InAs/GaAs(001). PHYSICAL REVIEW E, STATISTICAL, NONLINEAR, AND SOFT MATTER PHYSICS, 86, 061605 [10.1103/PhysRevE.86.061605]. Dettagli
  39. Placidi, E., Arciprete, F., Magri, R., Rosini, M., Vinattieri, A., Cavigli, L., et al. (2012). InAs epitaxy on GaAs(001): a model case of strain-driven self-assembling of quantum dots. In S. Bellucci (a cura di), Self-assembly of Nanostrucures, Surfaces and Quantum dots - The INFN Lectures - Vol. III (pp. 73-125). Berlin : Springer Verlag [DOI 10.1007/978-1-4614-0742-3_2]. Dettagli
  40. Colonna, S., Placidi, E., Ronci, F., Cricenti, A., Arciprete, F., & Balzarotti, A. (2011). The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface. JOURNAL OF APPLIED PHYSICS, 109(12), 123522 [10.1063/1.3601518]. Dettagli
  41. Herrera Diez, L., Konuma, M., Kremer, R., Honolka, J., Kern, K., Placidi, E., et al. (2011). Magnetoelectric properties of oxygenated (Ga,Mn)As. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 83(9) [10.1103/PhysRevB.83.094420]. Dettagli
  42. Herrera Diez, L., Konuma, M., Placidi, E., Arciprete, F., Rushforth, A.W., Campion, R.P., et al. (2011). Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices. APPLIED PHYSICS LETTERS, 98(2), 022503 [10.1063/1.3543843]. Dettagli
  43. Placidi, E., Zallo, E., Arciprete, F., Fanfoni, M., Patella, F., & Balzarotti, A. (2011). Comparative study of low temperature growth of InAs and InMnAs quantum dots. NANOTECHNOLOGY, 22(19), 195602 [10.1088/0957-4484/22/19/195602]. Dettagli
  44. Honolka, J., Herrera Diez, L., Kremer, R.K., Kern, K., Placidi, E., & Arciprete, F. (2010). Temperature dependent Néel wall dynamics in GaMnAs/GaAs. NEW JOURNAL OF PHYSICS, 12, 093022 [10.1088/1367-2630/12/9/093022]. Dettagli
  45. Herrera Diez, L., Honolka, J., Kern, K., Kronmüller, H., Placidi, E., Arciprete, F., et al. (2010). Magnetic aftereffect in compressively strained GaMnAs studied using Kerr microscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 81, 094412 [10.1103/PhysRevB.81.094412]. Dettagli
  46. Arciprete, F., Fanfoni, M., Patella, F., Della Pia, A., Balzarotti, A., & Placidi, E. (2010). Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001). PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 81(16). Dettagli
  47. Arciprete, F., Placidi, E., Patella, F., Fanfoni, M., Balzarotti, A., Vinattieri, A., et al. (2009). Selective growth of InAs quantum dots on SiO2-masked GaAs. JOURNAL OF NANOPHOTONICS, 3(1), 031995. Dettagli
  48. Placidi, E., Della Pia, A., & Arciprete, F. (2009). Annealing effects on faceting of InAs/GaAs(001) quantum dots. APPLIED PHYSICS LETTERS, 94(2) [10.1063/1.3056654]. Dettagli
  49. Thorpe, S.D., Arciprete, F., Placidi, E., Patella, F., Fanfoni, M., Balzarotti, A., et al. (2009). XPS and STM study of Mn incorporation on the GaAs(001) surface. In Superlattices and Microstructures (pp.258-265). LONDON : ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD [10.1016/j.spmi.2008.12.021]. Dettagli
  50. Bute, O., Cimpoca, G.V., Placidi, E., Arciprete, F., Patella, F., Fanfoni, M., et al. (2008). The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy. In Journal of Optoelectronics and Advanced Materials (pp.74-79). BUCHAREST-MAGURELE : NATL INST OPTOELECTRONICS. Dettagli
  51. Herrera Diez, L., Kremer, R.K., Enders, A., Rossle, M., Arac, E., Honolka, J., et al. (2008). Complex domain-wall dynamics in compressively strained Ga1-xMnxAs epilayers. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78(15) [10.1103/PhysRevB.78.155310]. Dettagli
  52. Patella, F., Arciprete, F., Placidi, E., Fanfoni, M., Balzarotti, A., Vinattieri, A., et al. (2008). Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach. APPLIED PHYSICS LETTERS, 93(23), 231904 [10.1063/1.3040327]. Dettagli
  53. Placidi, E., Arciprete, F., Fanfoni, M., Patella, F., & Balzarotti, A. (2008). The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding. In Self-Assembled Quantum Dots (pp. 1-23). New York : Springer. Dettagli
  54. Bute, O., Cimpoca, G.V., Placidi, E., Arciprete, F., Patella, F., Fanfoni, M., et al. (2007). The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots. In Proceedings of the International Semiconductor Conference, CAS (pp.337-340) [10.1109/SMICND.2007.4519729]. Dettagli
  55. Fanfoni, M., Placidi, E., Arciprete, F., Orsini, E., Patella, F., & Balzarotti, A. (2007). Sudden nucleation versus scale invariance of InAs quantum dots on GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 75(24). Dettagli
  56. Placidi, E., Arciprete, F., Fanfoni, M., Patella, F., Orsini, E., & Balzarotti, A. (2007). InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition. In Journal of Physics Condensed Matter. BRISTOL : IOP PUBLISHING LTD [10.1088/0953-8984/19/22/225006]. Dettagli
  57. Arciprete, F., Bohacova, M., Bluemer, J., Bollmann, E., Caruso, R., Di Carlo, P., et al. (2006). AIRFLY: Measurement of the air fluorescence radiation induced by electrons. In Nuclear Physics B - Proceedings Supplements (pp.186-189). AMSTERDAM : ELSEVIER SCIENCE BV [10.1016/j.nuclphysbps.2004.06.007]. Dettagli
  58. Arciprete, F., Bohacova, M., Buonomo, B., Caruso, R., Di Carlo, P., Doubrava, M., et al. (2006). AIRFLY: Measurement of the fluorescence yield in atmospheric gases. CZECHOSLOVAK JOURNAL OF PHYSICS, 56(1), A361-A367 [10.1007/s10582-006-0169-4]. Dettagli
  59. Arciprete, F., Placidi, E., Sessi, V., Fanfoni, M., Patella, F., & Balzarotti, A. (2006). How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001). APPLIED PHYSICS LETTERS, 89(4) [10.1063/1.2234845]. Dettagli
  60. Patella, F., Arciprete, F., Fanfoni, M., Balzarotti, A., & Placidi, E. (2006). Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001). APPLIED PHYSICS LETTERS, 88(16) [10.1063/1.2189915]. Dettagli
  61. Placidi, E., Hogan, C., Arciprete, F., Fanfoni, M., Patella, F., Del Sole, R., et al. (2006). Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 73(20) [10.1103/PhysRevB.73.205345]. Dettagli
  62. Aureli, I., Corradini, V., Mariani, C., Placidi, E., Arciprete, F., & Balzarotti, A. (2005). Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces. SURFACE SCIENCE, 576, 123-130 [10.1016/j.susc.2004.12.004]. Dettagli
  63. Bute, O., Arciprete, F., Patella, F., Balzarotti, A., Fanfoni, M., & Cimpoca, G. (2005). Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE. Paper presented at 6th Intern. Balcan Conference, Constanta. Dettagli
  64. Patella, F., Arciprete, F., Fanfoni, M., Sessi, V., Balzarotti, A., & Placidi, E. (2005). Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001). APPLIED PHYSICS LETTERS, 87(25), 1-3 [10.1063/1.2147731]. Dettagli
  65. Placidi, E., Arciprete, F., Sessi, V., Fanfoni, M., Patella, F., & Balzarotti, A. (2005). Step erosion during nucleation of InAsGaAs (001) quantum dots. APPLIED PHYSICS LETTERS, 86(24), 1-3 [10.1063/1.1946181]. Dettagli
  66. Arciprete, F., Goletti, C., Placidi, E., Hogan, C., Chiaradia, P., Fanfoni, M., et al. (2004). Surface states at the GaAs(001)2X4 surface. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 69(8), 813081-813084. Dettagli
  67. Nufris, S.M., Arciprete, F., Patella, F., Placidi, E., Fanfoni, M., Sgarlata, A., et al. (2004). Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth. In Institute Physics Conference Series (pp.195-198). Dettagli
  68. Patella, F., Sgarlata, A., Arciprete, F., Nufris, S., Szkutnik, P.D., Placidi, E., et al. (2004). Self-assembly of InAs and Si/Ge quantum dots on structured surfaces. JOURNAL OF PHYSICS. CONDENSED MATTER, 16(17) [10.1088/0953-8984/16/17/005]. Dettagli
  69. Arciprete, F., Goletti, C., Placidi, E., Chiaradia, P., Fanfoni, M., Patella, F., et al. (2003). Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 68(12), 125328 [10.1103/PhysRevB.68.125328]. Dettagli
  70. Balzarotti, A., Fanfoni, M., Patella, F., Arciprete, F., & Placidi, E. (2003). Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy. In Microelectronics Journal (pp.595). Dettagli
  71. Balzarotti, A., Fanfoni, M., Patella, F., Arciprete, F., Placidi, E., Onida, G., et al. (2003). The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra. SURFACE SCIENCE LETTERS, 524, 71. Dettagli
  72. Balzarotti, A., Placidi, E., Arciprete, E., Fanfoni, M., & Patella, F. (2003). Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS(11), 1153321. Dettagli
  73. D'Acapito, F., Colonna, S., Arciprete, F., Balzarotti, A., Davoli, I., Patella, F., et al. (2003). Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS). In Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (pp.85-89) [10.1016/S0168-583X(02)01679-8]. Dettagli
  74. Patella F., N.S. (2003). Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 67, 205308 [10.1103/PhysRevB.67.205308]. Dettagli
  75. Patella, F., Nufris, S., Arciprete, F., Fanfoni, M., Placidi, E., Sgarlata, A., et al. (2003). Structural study of the InAs quantum-dot nucleation on GaAs(001). In Microelectronics Journal [10.1016/S0026-2692(03)00038-7]. Dettagli
  76. Patella, F., Nufris, S., Arciprete, F., Fanfoni, M., Placidi, E., Sgarlata, A., et al. (2003). Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth. PHYSICAL REVIEW. B, CONDENSED MATTER, 67(20) [10.1103/PhysRevB.67.205308]. Dettagli
  77. Arciprete F., G.C. (2002). Optical anisotropy of oxidized InAs(0 0 1) surfaces. SURFACE SCIENCE, 515(2009/03/02 00:00:00.000), 281-286 [10.1016/S0039-6028(02)01774-0]. Dettagli
  78. Arciprete, F., Patella, F., Fanfoni, M., Nufris, S., Placidi, E., Schiumarini, D., et al. (2002). Morphology of self-assembled InAs quantum dots on GaAs(001). In Materials Research Society Symposium - Proceedings (pp.179-184). Dettagli
  79. Colonna, S., Arciprete, F., Balzarotti, A., Fanfoni, M., De Crescenzi, M., & Mobilio, S. (2002). In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface. SURFACE SCIENCE, 512 [10.1016/S0039-6028(02)01493-0]. Dettagli
  80. Goletti, C., Bussetti, G., Arciprete, F., Chiaradia, P., & Chiarotti, G. (2002). Infrared surface absorption in Si(111)2x1 observed with reflectance anisotropy spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 66(15), 1533071-1533073. Dettagli
  81. Patella, F., Arciprete, F., Placidi, E., Nufris, S., Fanfoni, M., Sgarlata, A., et al. (2002). Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays. APPLIED PHYSICS LETTERS, 81(12), 2270-2272 [10.1063/1.1508416]. Dettagli
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