Fabrizio Arciprete

Qualifica
ASSOCIATO CONFERMATO
Fonte dei dati: Archivio della Ricerca http://art.torvergata.it
  1. Cecchi, S., Dragoni, D., Kriegner, D., Tisbi, E., Zallo, E., Arciprete, F., et al. (2019). Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys. ADVANCED FUNCTIONAL MATERIALS, 29(2), 1805184. Dettagli
  2. Colonna, S., Sessi, V., Placidi, E., Ronci, F., Jimenez, E., & Arciprete, F. (2019). Two-dimensional antiferromagnetic ordering of the Mn/GaAs(001) interface. PHYSICAL REVIEW. B, 99(11), 115311. Dettagli
  3. Di Biagio, F., Cecchi, S., Arciprete, F., & Calarco, R. (2019). Crystallization Study of Ge-Rich (GeTe) m (Sb 2 Te 3 ) n Using Two-Step Annealing Process. PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, 13(4), 1800632. Dettagli
  4. Francolini, I., Perugini, E., Silvestro, I., Lopreiato, M., D'Abusco, A.s., Valentini, F., et al. (2019). Graphene oxide oxygen content affects physical and biological properties of scaffolds based on Chitosan/graphene oxide conjugates. MATERIALS, 12(7), 1142. Dettagli
  5. Honolka, J., Hogan, C., Vondracek, M., Polyak, Y., Arciprete, F., & Placidi, E. (2019). Electronic properties of GaAsBi(001) alloys at low Bi content. PHYSICAL REVIEW MATERIALS, 3(4). Dettagli
  6. Bragaglia, V., Arciprete, F., Mio, A.m., & Calarco, R. (2018). Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering. JOURNAL OF APPLIED PHYSICS, 123(21), 215304. Dettagli
  7. Mecheri, B., Ficca, V., Costa de Oliveira, M.a., D'Epifanio, A., Placidi, E., Arciprete, F., et al. (2018). Facile synthesis of graphene-phthalocyanine composites as oxygen reduction electrocatalysts in microbial fuel cells. APPLIED CATALYSIS. B, ENVIRONMENTAL, 237, 699-707. Dettagli
  8. Shahbazi Farahani, F., Mecheri, B., Reza Majidi, M., Costa de Oliveira, M.a., D'Epifanio, A., Zurlo, F., et al. (2018). MnOx-based electrocatalysts for enhanced oxygen reduction in microbial fuel cell air cathodes. JOURNAL OF POWER SOURCES, 390, 45-53. Dettagli
  9. Verona, C., Arciprete, F., Foffi, M., Limiti, E., Marinelli, M., Placidi, E., et al. (2018). Influence of surface crystal-orientation on transfer doping of V2O5/H-terminated diamond. APPLIED PHYSICS LETTERS, 112(18), 181602. Dettagli
  10. Zallo, E., Cecchi, S., Boschker, J.E., Mio, A.M., Arciprete, F., Privitera, S., et al. (2017). Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys. SCIENTIFIC REPORTS, 7(1), 1466. Dettagli
  11. Arciprete, F., & Calarco, R. (2017). A special section on effects of strain in semiconductor heterostructures. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 9(7), 1064-1065. Dettagli
  12. Boschker, J.T., Placidi, E., Momand, J., Redaelli, A., Kooi, B.J., Arciprete, F., et al. (2017). Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy. AIP ADVANCES, 7(1), 015106. Dettagli
  13. Costa de Oliveira, M., Mecheri, B., D'Epifanio, A., Placidi, E., Arciprete, F., Valentini, F., et al. (2017). Graphene oxide nanoplatforms to enhance catalytic performance of iron phthalocyanine for oxygen reduction reaction in bioelectrochemical systems. JOURNAL OF POWER SOURCES, 356, 381. Dettagli
  14. Latini, V., Placidi, E., Magri, R., Tisbi, E., Patella, F., & Arciprete, F. (2017). Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 9(7), 1083-1094. Dettagli
  15. Latini, V., Tisbi, E., Placidi, E., Patella, F., Biccari, F., Gurioli, M., et al. (2017). Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters. JOURNAL OF CRYSTAL GROWTH, 457, 177-183. Dettagli
  16. Mio, A.M., Privitera, S., Bragaglia, V., Arciprete, F., Bongiorno, C., Calarco, R., et al. (2017). Chemical and structural arrangement of the trigonal phase in GeSbTe thin films. NANOTECHNOLOGY, 28(6), 065706. Dettagli
  17. Mio, A.M., Privitera, S., Bragaglia, V., Arciprete, F., Cecchi, S., Litrico, G., et al. (2017). Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures. SCIENTIFIC REPORTS, 7(1), 2616. Dettagli
  18. Bragaglia, V., Holldack, K., Boschker, J.e., Arciprete, F., Zallo, E., Flissikowski, T., et al. (2016). Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2 Te3 Alloys. SCIENTIFIC REPORTS, 6, 28560. Dettagli
  19. Bragaglia, V., Arciprete, F., Zhang, W., Mio, A.M., Zallo, E, et al. (2016). Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials. SCIENTIFIC REPORTS, 6, 23843. Dettagli
  20. Fanfoni, M., Filabozzi, A., Placidi, E., Patella, F., Balzarotti, A., & Arciprete, F. (2016). 2D Voronoi tessellation generated by lines and belts of dots. PHYSICS LETTERS A, 380(3), 516-519. Dettagli
  21. Latini, V., Placidi, E., Arciprete, F., Tisbi, E., Patella, F., & Magri, R. (2016). Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots. JOURNAL OF APPLIED PHYSICS, 120(12), 125704. Dettagli
  22. Tisbi, E., Latini, V., Patella, F., Placidi, E., & Arciprete, F. (2016). Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots. JOURNAL OF APPLIED PHYSICS, 120(23), 235303. Dettagli
  23. Latini, V., Placidi, E., Arciprete, F., & Patella, F. (2015). In-line correlation and ordering of InAs/GaAs multistacked Quantum Dots structures. JOURNAL OF CRYSTAL GROWTH, 419, 138-142. Dettagli
  24. Placidi, E., Arciprete, F., Sarti, F., Gurioli, M., Vinattieri, A., & Patella, F. (2015). Single QD emission from arrays of QD chains obtained by patterning-free method. ADVANCED DEVICE MATERIALS, 1(1), 33-37. Dettagli
  25. Placidi, E., Arciprete, F., Latini V, Latini, S., Magri, R., Scuderi, M., et al. (2014). Manipulating surface diffusion and elastic interactions to obtain Quantum Dot Multilayer arrangements over different length scales. APPLIED PHYSICS LETTERS, 105(11), 111905. Dettagli
  26. Magri, R., Placidi, E., Arciprete, F., & Patella, F. (2014). Selective Growth of InAs Quantum Dots on GaAs driven by As kinetics. CRYSTAL RESEARCH AND TECHNOLOGY, 49(8), 546-551. Dettagli
  27. Arciprete, F., De Angelis, R., De Matteis, F., Persichetti, L., Placidi, E., Prosposito, P., et al. (2013). Guide d'onda: fabbricazione e caratterizzazione. In L. Catena, F. Berrilli, I. Davoli, & P. Prosposito (a cura di), STUDENTI-RICERCATORI per cinque giorni "Stage a Tor Vergata" (pp. 169-202). Milano : Springer Verlag Italia s.r.l.. Dettagli
  28. Arciprete, F., Placidi, E., Magri, R., Del Gaudio, D., & Patella, F. (2013). Kinetically Driven Selective Growth of InAs Quantum Dots on GaAs. JOURNAL OF MATERIALS RESEARCH, 28(23), 3201-3209. Dettagli
  29. Arciprete, F., Placidi, E., Magri, R., Fanfoni, M., Balzarotti, A., & Patella, F. (2013). Role of As in the anisotropic positioning of self-assembled InAs quantum dots. In I. Berbezier, J. Aqua, J. Floro, & A. Kuznetsov (a cura di), 2013 MRS Spring meeting: Symposium R, Nanostructured semiconductors and nanotechnology (pp. 3-9). MATERIALS RESEARCH SOCIETY. Dettagli
  30. Arciprete, F., Placidi, E., Magri, R., Fanfoni, M., Balzarotti, A., & Patella, F. (2013). The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs. ACS NANO, 7(5), 3868-3875. Dettagli
  31. Fanfoni, M., Patella, F., Tomellini, M., & Arciprete, F. (2012). I fenomeni fisici e chimici irreversibili: La diffusione. LETTERA MATEMATICA PRISTEM, 83(6), 34-39. Dettagli
  32. Placidi, E., Arciprete, F., Balzarotti, A., & Patella, F. (2012). Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy. APPLIED PHYSICS LETTERS, 101(14), 141901-141903. Dettagli
  33. Fanfoni, M., Arciprete, F., Tirabassi, C., Del Gaudio, D., Filabozzi, A., Balzarotti, A., et al. (2012). Coarsening effect on island-size scaling: The model case InAs/GaAs(001). PHYSICAL REVIEW E, STATISTICAL, NONLINEAR, AND SOFT MATTER PHYSICS, 86, 061605. Dettagli
  34. Placidi, E., Arciprete, F., Magri, R., Rosini, M., Vinattieri, A., Cavigli, L., et al. (2012). InAs epitaxy on GaAs(001): a model case of strain-driven self-assembling of quantum dots. In S. Bellucci (a cura di), Self-assembly of Nanostrucures, Surfaces and Quantum dots - The INFN Lectures - Vol. III (pp. 73-125). Berlin : Springer Verlag. Dettagli
  35. Colonna, S., Placidi, E., Ronci, F., Cricenti, A., Arciprete, F., & Balzarotti, A. (2011). The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface. JOURNAL OF APPLIED PHYSICS, 109(12), 123522. Dettagli
  36. Herrera Diez, L., Konuma, M., Kremer, R., Honolka, J., Kern, K., Placidi, E., et al. (2011). Magnetoelectric properties of oxygenated (Ga,Mn)As. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 83(9). Dettagli
  37. Herrera Diez, L., Konuma, M., Placidi, E., Arciprete, F., Rushforth, A.W., Campion, R.P., et al. (2011). Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices. APPLIED PHYSICS LETTERS, 98(2), 022503. Dettagli
  38. Placidi, E., Zallo, E., Arciprete, F., Fanfoni, M., Patella, F., & Balzarotti, A. (2011). Comparative study of low temperature growth of InAs and InMnAs quantum dots. NANOTECHNOLOGY, 22(19), 195602. Dettagli
  39. Honolka, J., Herrera Diez, L., Kremer, R.K., Kern, K., Placidi, E., & Arciprete, F. (2010). Temperature dependent Néel wall dynamics in GaMnAs/GaAs. NEW JOURNAL OF PHYSICS, 12, 093022. Dettagli
  40. Herrera Diez, L., Honolka, J., Kern, K., Kronmüller, H., Placidi, E., Arciprete, F., et al. (2010). Magnetic aftereffect in compressively strained GaMnAs studied using Kerr microscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 81, 094412. Dettagli
  41. Arciprete, F., Fanfoni, M., Patella, F., Della Pia, A., Balzarotti, A., & Placidi, E. (2010). Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001). PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 81(16). Dettagli
  42. Arciprete F., P.E. (2009). Selective growth of InAs quantum dots on SiO2-masked GaAs. JOURNAL OF NANOPHOTONICS, 3, 031995. Dettagli
  43. Placidi, E., Della Pia, A., & Arciprete, F. (2009). Annealing effects on faceting of InAs/GaAs(001) quantum dots. APPLIED PHYSICS LETTERS, 94(2). Dettagli
  44. Thorpe, S.D., Arciprete, F., Placidi, E., Patella, F., Fanfoni, M., Balzarotti, A., et al. (2009). XPS and STM study of Mn incorporation on the GaAs(001) surface. In Superlattices and Microstructures (pp.258-265). LONDON : ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD. Dettagli
  45. Bute, O., Cimpoca, G.V., Placidi, E., Arciprete, F., Patella, F., Fanfoni, M., et al. (2008). The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy. In Journal of Optoelectronics and Advanced Materials (pp.74-79). BUCHAREST-MAGURELE : NATL INST OPTOELECTRONICS. Dettagli
  46. Herrera Diez, L., Kremer, R.K., Enders, A., Rossle, M., Arac, E., Honolka, J., et al. (2008). Complex domain-wall dynamics in compressively strained Ga1-xMnxAs epilayers. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78(15). Dettagli
  47. Patella, F., Arciprete, F., Placidi, E., Fanfoni, M., Balzarotti, A., Vinattieri, A., et al. (2008). Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach. APPLIED PHYSICS LETTERS, 93(23), 231904. Dettagli
  48. Placidi, E., Arciprete, F., Fanfoni, M., Patella, F., & Balzarotti, A. (2008). The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding. In Self-Assembled Quantum Dots (pp. 1-23). New York : Springer. Dettagli
  49. Bute, O., Cimpoca, G.V., Placidi, E., Arciprete, F., Patella, F., Fanfoni, M., et al. (2007). The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots. In Proceedings of the International Semiconductor Conference, CAS (pp.337-340). Dettagli
  50. Fanfoni, M., Placidi, E., Arciprete, F., Orsini, E., Patella, F., & Balzarotti, A. (2007). Sudden nucleation versus scale invariance of InAs quantum dots on GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 75(24). Dettagli
  51. Placidi, E., Arciprete, F., Fanfoni, M., Patella, F., Orsini, E., & Balzarotti, A. (2007). InAs/GaAs(001) epitaxy: Kinetic effects in the two-dimensional to three-dimensional transition. In Journal of Physics Condensed Matter. BRISTOL : IOP PUBLISHING LTD. Dettagli
  52. Arciprete, F., Bohacova, M., Bluemer, J., Bollmann, E., Caruso, R., Di Carlo, P., et al. (2006). AIRFLY: Measurement of the air fluorescence radiation induced by electrons. In Nuclear Physics B - Proceedings Supplements (pp.186-189). AMSTERDAM : ELSEVIER SCIENCE BV. Dettagli
  53. Arciprete, F., Placidi, E., Sessi, V., Fanfoni, M., Patella, F., & Balzarotti, A. (2006). How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001). APPLIED PHYSICS LETTERS, 89(4). Dettagli
  54. Patella, F., Arciprete, F., Fanfoni, M., Balzarotti, A., & Placidi, E. (2006). Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001). APPLIED PHYSICS LETTERS, 88(16). Dettagli
  55. Placidi, E., Hogan, C., Arciprete, F., Fanfoni, M., Patella, F., Del Sole, R., et al. (2006). Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 73(20). Dettagli
  56. Aureli, I., Corradini, V., Mariani, C., Placidi, E., Arciprete, F., & Balzarotti, A. (2005). Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces. SURFACE SCIENCE, 576, 123-130. Dettagli
  57. Bute, O., Arciprete, F., Patella, F., Balzarotti, A., Fanfoni, M., & Cimpoca, G. (2005). Atomic Force microscopy analyses of InAs/GaAs heterostructures grown by MBE. Paper presented at 6th Intern. Balcan Conference, Constanta. Dettagli
  58. Patella, F., Arciprete, F., Fanfoni, M., Sessi, V., Balzarotti, A., & Placidi, E. (2005). Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001). APPLIED PHYSICS LETTERS, 87(25), 1-3. Dettagli
  59. Placidi, E., Arciprete, F., Sessi, V., Fanfoni, M., Patella, F., & Balzarotti, A. (2005). Step erosion during nucleation of InAsGaAs (001) quantum dots. APPLIED PHYSICS LETTERS, 86(24), 1-3. Dettagli
  60. Arciprete, F., Goletti, C., Placidi, E., Hogan, C., Chiaradia, P., Fanfoni, M., et al. (2004). Surface states at the GaAs(001)2X4 surface. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 69(8), 813081-813084. Dettagli
  61. Nufris, S.M., Arciprete, F., Patella, F., Placidi, E., Fanfoni, M., Sgarlata, A., et al. (2004). Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth. In Institute Physics Conference Series (pp.195-198). Dettagli
  62. Patella, F., Sgarlata, A., Arciprete, F., Nufris, S., Szkutnik, P.D., Placidi, E., et al. (2004). Self-assembly of InAs and Si/Ge quantum dots on structured surfaces. JOURNAL OF PHYSICS. CONDENSED MATTER, 16(17). Dettagli
  63. Arciprete, F., Goletti, C., Placidi, E., Chiaradia, P., Fanfoni, M., Patella, F., et al. (2003). Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4x4) surface. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 68(12), 125328. Dettagli
  64. Balzarotti, A., Fanfoni, M., Patella, F., Arciprete, F., & Placidi, E. (2003). Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy. In Microelectronics Journal (pp.595). Dettagli
  65. Balzarotti, A., Fanfoni, M., Patella, F., Arciprete, F., Placidi, E., Onida, G., et al. (2003). The GaAS(001)-c(4x4) surface: a new perspective from energy loss spectra. SURFACE SCIENCE LETTERS, 524, 71. Dettagli
  66. Balzarotti, A., Placidi, E., Arciprete, E., Fanfoni, M., & Patella, F. (2003). Anisotropy of the GaAs(001)-beta 2(2x4) surface from high-resolution electron energy loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS(11), 1153321. Dettagli
  67. D'Acapito, F., Colonna, S., Arciprete, F., Balzarotti, A., Davoli, I., Patella, F., et al. (2003). Inx Ga(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS). In Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (pp.85-89). Dettagli
  68. Patella F., N.S. (2003). Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 67, 205308. Dettagli
  69. Patella, F., Nufris, S., Arciprete, F., Fanfoni, M., Placidi, E., Sgarlata, A., et al. (2003). Structural study of the InAs quantum-dot nucleation on GaAs(001). In Microelectronics Journal. Dettagli
  70. Patella, F., Nufris, S., Arciprete, F., Fanfoni, M., Placidi, E., Sgarlata, A., et al. (2003). Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth. PHYSICAL REVIEW. B, CONDENSED MATTER, 67(20). Dettagli
  71. Arciprete F., G.C. (2002). Optical anisotropy of oxidized InAs(0 0 1) surfaces. SURFACE SCIENCE, 515(2009/03/02 00:00:00.000), 281-286. Dettagli
  72. Arciprete, F., Patella, F., Fanfoni, M., Nufris, S., Placidi, E., Schiumarini, D., et al. (2002). Morphology of self-assembled InAs quantum dots on GaAs(001). In Materials Research Society Symposium - Proceedings (pp.179-184). Dettagli
  73. Colonna, S., Arciprete, F., Balzarotti, A., Fanfoni, M., De Crescenzi, M., & Mobilio, S. (2002). In situ X-ray absorption measurements of the Cu/MgO(0 0 1) interface. SURFACE SCIENCE, 512. Dettagli
  74. Goletti, C., Bussetti, G., Arciprete, F., Chiaradia, P., & Chiarotti, G. (2002). Infrared surface absorption in Si(111)2x1 observed with reflectance anisotropy spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 66(15), 1533071-1533073. Dettagli
  75. Patella, F., Arciprete, F., Placidi, E., Nufris, S., Fanfoni, M., Sgarlata, A., et al. (2002). Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays. APPLIED PHYSICS LETTERS, 81(12), 2270-2272. Dettagli
  76. Arciprete, F., Balzarotti, A., Fanfoni, M., Motta, N., Patella, F., & Sgarlata, A. (2001). Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111). In Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge 0n Si(111) (pp. 71-98). Trivandrum : Transworld Research Network. Dettagli
  77. Chiarotti, G., Goletti, C., Chiaradia, P., & Arciprete, F. (2001). Optical Properties of Semiconductor Surfaces. In Antonio Cricenti (a cura di), EPIOPTICS 2000 (pp. 24-38). World Scientific. Dettagli
  78. Goletti, C., Arciprete, F., Almaviva, S., Chiaradia, P., Esser, N., & Richter, W. (2001). Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 64(19), 1933011-1933014. Dettagli
  79. Patella, F., Fanfoni, M., Arciprete, F., Nufris, S., Placidi, E., & Balzarotti, A. (2001). Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001). APPLIED PHYSICS LETTERS, 78(3), 320-322. Dettagli
  80. Colonna S., A.F. (2000). EXAFS study of the [BaCuO2](2)/[(Ca,Sr)CuO2](n) artificial superconducting superlattices. PHYSICA. C, SUPERCONDUCTIVITY, 334(1), 64-76. Dettagli
  81. Colonna S., A.F. (2000). XAS study of (BaCuO2)(2)/(CaCuO2)(n) superlattices. In International Journal of Modern Physics B (pp.2628-2633). SINGAPORE : WORLD SCIENTIFIC PUBL CO PTE LTD. Dettagli
  82. Fanfoni, M., Placidi, E., Arciprete, F., Patella, F., Motta, N., & Balzarotti, A. (2000). Dynamic behavior of silver islands growing on GaAs(001)2X4 substrate. SURFACE SCIENCE, 445(1). Dettagli
  83. Placidi, E., Fanfoni, M., Arciprete, F., Patella, F., Motta, N., & Balzarotti, A. (2000). Scaling law and dynamical exponent in the Volmer-Weber growth mode: silver on GaAs(001)2 x 4. In MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (pp.243-246). LAUSANNE : ELSEVIER SCIENCE SA. Dettagli
  84. Marre, D., Braccini, V., Canesi, A., Gariglio, S., Pallecchi, I., Putti, M., et al. (1999). Epitaxial growth and characterisation of artificial and superconducting superlattices deposited by PLD. In INTERNATIONAL JOURNAL OF MODERN PHYSICS B (pp.1061-1066). SINGAPORE : WORLD SCIENTIFIC PUBL CO PTE LTD. Dettagli
  85. Arciprete, F., Patella, F., Balzarotti, A., Fanfoni, M., Motta, N., Sgarlata, A., et al. (1998). Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 58(16), R10139-R10142. Dettagli
  86. Fanfoni, M., Arciprete, F., Patella, F., Boselli, A., Sgarlata, A., Motta, N., et al. (1998). Comparative study of Ag growth on GaAs(001) and (110) surfaces. SURFACE SCIENCE, 419(1), 24-28. Dettagli
  87. Arciprete F., B.G. (1997). Electrical transport properties of artificially layered films of [BaCuO2](2)/[(Sr,Ca)CuO2](n). APPLIED PHYSICS LETTERS, 71(7), 959-961. Dettagli
  88. Arciprete, F., Colonna, S., Fanfoni, M., Patella, F., & Balzarotti, A. (1996). Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions. PHYSICAL REVIEW. B, CONDENSED MATTER, 53(19), 12948-12955. Dettagli
  89. Balzarotti, A., Belli, P., Bernabei, R., Di Nicolantonio, W., Fanfoni, M., Landoni, V., et al. (1996). GaAs detectors for underground physics. Paper presented at Gallium Arsenide and related compounds, San Miniato. Dettagli
  90. Arciprete, F., Colonna, S., Fanfoni, M., Patella, F., & Balzarotti, A. (1995). Electron energy loss study of Ag- and Au-GaAs(110) interfaces. In Journal of Electron Spectroscopy and Related Phenomena (pp.449-454). AMSTERDAM : ELSEVIER SCIENCE BV. Dettagli
  91. Balzarotti, A., Bernabei, R., Fanfoni, M., Motta, N., Paoluzi, L., Patella, F., et al. (1995). Gallium Arsenide detectors for underground physics. In Gallium Arsenide and Related Compounds. World Scientific. Dettagli
  92. Balzarotti, A., Arciprete, F., Colonna, S., Diociaiuti, M., Patella, F., & De Crescenzi, M. (1993). Angular dependence of the oxygen K-edge fine structure in electron-energy loss spectra of Bi2-xPbxSr2CaCu2O8. PHYSICA. C, SUPERCONDUCTIVITY, 218, 301-308. Dettagli
  93. Balzarotti, A., Patella, F., Arciprete, F., Motta, N., & De Crescenzi, M. (1992). Reactivity of the Bi2Sr2CaCu2O8 and Bi1.7Pb0.3Sr2CaCu2O8 surfaces for d-metal overlayers. PHYSICA. C, SUPERCONDUCTIVITY, 196(1-2), 79-89. Dettagli
  94. Arciprete F., B.A. (1991). EELFS INVESTIGATION OF YBA2CU3O7-DELTA THIN-FILMS AND SINTERED SAMPLES. In Physica C: Superconductivity and its applications (pp.132). AMSTERDAM : ELSEVIER SCIENCE BV. Dettagli
  95. Balzarotti, A., Patella, F., Arciprete, F., Motta, N., Sgarlata, A., & De Crescenzi, M. (1991). Interface formation between d metals and the Bi2Sr2CaCu2O8 surface. PHYSICA. C, SUPERCONDUCTIVITY, 180(1-4), 101-107. Dettagli
  96. De Crescenzi, M., Motta, N., Patella, F., Sgarlata, A., Arciprete, F., Balzarotti, A., et al. (1991). MgO(100) structural investigations using EELFS and EXFAS techniques. In v.H.M. Tong S.Y. (a cura di), The Structure of Surfaces III (pp. 665). Berlino : Springer Verlag. Dettagli